MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOS
TM
OptiMOS™3Power-MOSFET,75V
BSF450NE7NH3G
DataSheet
Rev.2.2
Final
PowerManagement&Multimarket
OptiMOSª3Power-MOSFET,75V
BSF450NE7NH3G
1Description
Features
•OptimizedtechnologyforDC/DCconverters
•ExcellentgatechargexR
DS(on)
product(FOM)
•Superiorthermalresistance
•Dualsidedcooling
•Lowparasiticinductance
•Lowprofile(<0.7mm)
•N-channel,normallevel
•100%avalanchetested
•Pb-freeplating;RoHScompliant
•QualifiedaccordingtoJEDEC
1)
fortargetapplications
•CompatiblewithDirectFET®packageSTfootprintandoutline
CanPAKS
Table1KeyPerformanceParameters
Parameter
V
DS
R
DS(on),max
I
D
Value
75
45
15
Unit
V
mΩ
A
Type/OrderingCode
BSF450NE7NH3 G
Package
MG-WDSON-2
Marking
0307
RelatedLinks
-
1)
J-STD20 and JESD22
Final Data Sheet
2
Rev.2.2,2015-03-30
OptiMOSª3Power-MOSFET,75V
BSF450NE7NH3G
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
3
Rev.2.2,2015-03-30
OptiMOSª3Power-MOSFET,75V
BSF450NE7NH3G
2Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Min.
-
-
-
-
-
-20
-
-
-40
Typ.
-
-
-
-
-
-
-
-
-
Max.
15
10
5
60
17
20
18
2.2
150
Unit
Note/TestCondition
V
GS
=10V,T
C
=25°C
V
GS
=10V,T
C
=100°C
V
GS
=10V,T
A
=25°C,R
thJA
=58K/W
1)
T
C
=25°C
I
D
=8A,R
GS
=25Ω
-
T
C
=25°C
T
A
=25°C,R
thJA
=58K/W
1)
IEC climatic category;
DIN IEC 68-1: 55/150/56
Continuous drain current
Pulsed drain current
2)
Avalanche energy, single pulse
3)
Gate source voltage
Power dissipation
Operating and storage temperature
I
D
I
D,pulse
E
AS
V
GS
P
tot
T
j
,T
stg
A
A
mJ
V
W
°C
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Thermal resistance, junction - case,
bottom
Thermal resistance, junction - case,
top
Device on PCB,
6 cm
2
cooling area
1)
Symbol
R
thJC
R
thJC
R
thJA
Values
Min.
-
-
-
Typ.
1.0
-
-
Max.
-
7
58
Unit
K/W
K/W
K/W
Note/TestCondition
-
-
-
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Final Data Sheet
4
Rev.2.2,2015-03-30
OptiMOSª3Power-MOSFET,75V
BSF450NE7NH3G
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
g
fs
Values
Min.
75
2.3
-
-
-
-
-
-
5.5
Typ.
-
2.9
0.1
10
10
37.6
46.5
1.5
11
Max.
-
3.5
10
100
100
45
62
-
-
Unit
V
V
µA
nA
mΩ
Ω
S
Note/TestCondition
V
GS
=0V,I
D
=1mA
V
DS
=V
GS
,I
D
=8µA
V
DS
=75V,V
GS
=0V,T
j
=25°C
V
DS
=75V,V
GS
=0V,T
j
=125°C
V
GS
=20V,V
DS
=0V
V
GS
=10V,I
D
=8A
V
GS
=7V,I
D
=4A
-
|V
DS
|>2|I
D
|R
DS(on)max
,I
D
=8A
Table5Dynamiccharacteristics
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Values
Min.
-
-
-
-
-
-
-
Typ.
390
110
22
8.0
11.3
11
3.2
Max.
-
-
-
-
-
-
-
Unit
pF
pF
pF
ns
ns
ns
ns
Note/TestCondition
V
GS
=0V,V
DS
=37.5V,f=1MHz
V
GS
=0V,V
DS
=37.5V,f=1MHz
V
GS
=0V,V
DS
=37.5V,f=1MHz
V
DD
=37.5V,V
GS
=10V,I
D
=8A,
R
G,ext
=1.6Ω
V
DD
=37.5V,V
GS
=10V,I
D
=8A,
R
G,ext
=1.6Ω
V
DD
=37.5V,V
GS
=10V,I
D
=8A,
R
G,ext
=1.6Ω
V
DD
=37.5V,V
GS
=10V,I
D
=8A,
R
G,ext
=1.6Ω
Table6Gatechargecharacteristics
1)
Parameter
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Symbol
Q
gs
Q
gd
Q
sw
Q
g
V
plateau
Q
oss
Values
Min.
-
-
-
-
-
-
Typ.
2
2
3
6
5.5
7
Max.
-
-
-
-
-
-
Unit
nC
nC
nC
nC
V
nC
Note/TestCondition
V
DD
=37.5V,I
D
=8A,V
GS
=0to10V
V
DD
=37.5V,I
D
=8A,V
GS
=0to10V
V
DD
=37.5V,I
D
=8A,V
GS
=0to10V
V
DD
=37.5V,I
D
=8A,V
GS
=0to10V
V
DD
=37.5V,I
D
=8A,V
GS
=0to10V
V
DD
=37.5V,V
GS
=0V
1)
See
″Gate
charge waveforms″ for parameter definition
Final Data Sheet
5
Rev.2.2,2015-03-30
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