CHA7012
RoHS COMPLIANT
X-band HBT High Power Amplifier
GaAs Monolithic Microwave IC
Description
The
CHA7012
chip is a monolithic two-stage
GaAs high power amplifier designed for X band
applications.
This device is manufactured using a GaInP
HBT process, including, via holes through the
substrate and air bridge. A nitride layer protects
the transistors and the passive components.
Special
heat
removal
techniques
are
implemented to guarantee high reliability.
To simplify the assembly process:
-the backside of the chip is both RF and DC
grounded
-bond pads and back side are gold plated for
compatibility with eutectic die attach method
and thermosonic or thermo compression
bonding process.
TI Vc
TO
Vctrl
Biasing
Circuit
Vc Vc
TTL
Circuit
IN
OUT
TTL
Circuit
Biasing
Circuit
TI Vc
44
TO
Vctrl Vc
Vc
Pout & PAE@3dBc , Linear Gain
PAE@3dBc (%)
40
36
32
28
Main Features
Frequency band: 9.2 -10.4GHz
Output power (P3dB ): 38.5dBm
High linear gain: > 20dB
High PAE: > 38%
Two biasing modes:
-VDigital control thanks to TTL interface
-VAnalog control thanks to biasing circuit
Chip size: 5.00 x 3.68 x 0.1mm
Pout@3dBc(dBm
Linear Gain (Pin=0dBm)
24
20
1
6
9
9.2
9.4
9.6
9.8
1
0
1
0.2
1
0.4
1
0.6
Frequency ( GHz)
Pout & PAE @3dBc and Linear Gain @ 25°
C
Main Characteristics
Vc=7.5V, Ic (Quiescent) = 1.9A, Pulse width=100µs, Duty cycle = 20%
Symbol
Parameter
Min
Typ
Fop
Psat
P_3dBc
G
Top
Max
10.4
Unit
GHz
W
W
dB
°
C
Operating frequency range
Saturated output power @ 25°
C
Output power @ 3dBc @ 25°
C
Small signal gain @ 25°
C
Operating temperature range
9.2
9
7
20
-40
+80
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHA70129082- 23 March 09
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA7012
Electrical Characteristics
X-band High Power Amplifier
Tamb = 20° Vc=7.5V, Ic (Quiescent) = 1.9A, Pulse width=100µs, Duty cycle = 20%
C,
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency
9.2
10.4
GHz
G
Small signal gain
17.5
20
23
dB
G_T
Small signal gain variation versus
-0.025
dB/°
C
temperature
RLin
Input Return Loss
8
10
dB
RLout
Output Return Loss
8
12
dB
Psat
Saturated output power
39.5
dBm
Psat_T
Saturated output power variation versus
-0.01
dB/°
C
temperature
P_3dBc
Output power @ 3dBc (3)
38
38.5
dBm
PAE_3dBc
Power Added Efficiency @ 3dBc
34
38
%
Vc
Power supply voltage (3)
7.5
8
V
Ic
Power supply quiescent current (1)
1.9
A
TI
TTL input voltage
0
5
V
I_TI
TTL input current
1
mA
Vctrl
Collector control voltage
5
V
Zctr
Vctrl input port impedance (2)
350
Ohm
Top
Operating temperature range
-40
+80
°
C
(1) Parameter tunable by Vctrl when control biasing circuit used.
(2) This value corresponds to the 4 ports in parallel (Pin 4, 8, 14, 18)
(3) 0.5V variation on Vc leads to around 0.4dB variation of the output power (impact on
robustness see Maximum ratings)
Symbol
Absolute Maximum Ratings
(1)
Tamb = 20°
C
Symbol
Cmp
Vc
Ic
Ic_sat
Vctrl
Tj
Tstg
Parameter
Compression level (2)
Power supply voltage with RF
Power supply quiescent current
Power supply current in saturation
Collector current control voltage
Maximum junction temperature
Storage temperature range
Values
6
8
2.8
3.5
6.5
175
-55 to +125
Unit
dBc
V
A
A
V
°
C
°
C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) For higher compression the level limit can be increased by decreasing the voltage Vc using
the rate 0.5 V / dBc
Equivalent Thermal resistance to Backside: 6°
C/W
Ref. : DSCHA70129082- 23 March 09
2/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band High Power Amplifier
Typical measured characteristics
Measurements on Jig
CHA7012
Vc=7.5V, VTTL=5V, Ic (Quiescent) = 1.9A, Pulse width=100µs, Duty cycle = 20%
30
28
26
Linear gain (dB)
24
22
20
18
16
14
12
10
8.5
8.7
8.9
9.1
9.3
9.5
9.7
9.9
10.1 10.3 10.5 10.7 10.9 11.1
Frequency (GHz)
Linear gain versus frequency and temperature
+20°
C
+80°
C
-40°
C
42
41
40
39
Pout (dBm)
38
37
36
35
34
33
32
8.5
8.7
8.9
9.1
9.3
9.5
9.7
9.9
10.1 10.3 10.5 10.7 10.9 11.1
Frequency (GHz)
+20°
C
+80°
C
-40°
C
Output Power @ 3dBc versus frequency and temperature
Ref. : DSCHA70129082- 23 March 09
3/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA7012
50
45
40
PAE (%)
35
30
25
20
8.5
8.7
8.9
9.1
9.3
9.5
9.7
+20°C
+80°C
-40°C
X-band High Power Amplifier
9.9 10.1 10.3 10.5 10.7 10.9 11.1
Frequency (GHz)
PAE @ 3dBc versus frequency and temperature
3
2.9
2.8
2.7
2.6
Ic (A)
2.5
2.4
2.3
2.2
2.1
2
8.5
8.7
8.9
9.1
9.3
9.5
9.7
9.9 10.1 10.3 10.5 10.7 10.9 11.1
Frequency (GHz)
Ic @ 3dBc versus frequency and temperature
+20°C
+80°C
-40°C
Ref. : DSCHA70129082- 23 March 09
4/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band High Power Amplifier
CHA7012
40
38
36
Pout (dB)
34
32
30
28
26
-1
0
1
2
3
4
5
6
7
8
Compression (dB)
Output Power @ 25° versus compression and frequenc y
C
9.2GHz
9.4GHz
9.6GHz
9.8GHz
10GHz
10.2GHz
10.4GHz
50
45
40
35
PAE (%)
30
25
20
15
10
5
0
-1
0
1
2
3
4
5
6
7
8
Compression (dB)
PAE @ 25° versus compression and frequency
C
9.2GHz
9.4GHz
9.6GHz
9.8GHz
10GHz
10.2GHz
10.4GHz
Ref. : DSCHA70129082- 23 March 09
5/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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