BLP8G21S-160PV_15 datasheet, PDF

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BLP8G21S-160PV_15: DescriptionPower LDMOS transistor; File Size157KB，11 Pages; ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.); Websitehttps://www.nxp.com/

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BLP8G21S-160PV_15 Overview

Power LDMOS transistor

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BLP8G21S-160PV

Power LDMOS transistor

Rev. 3 — 1 July 2014

Product data sheet

1. Product profile

1.1 General description

160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to

2025 MHz.

Table 1.

Typical performance

Typical RF performance per section at T

case

= 25



C in a common source class-AB production test

circuit.

Test signal

2-carrier W-CDMA

[1]

(MHz)

1880 to 1920

(mA)

600

(V)

L(AV)

(W)

(dB)

17.5



(%)

ACPR

(dBc)

30

[1]

Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;

carrier spacing = 5 MHz.

1.2 Features and benefits



Designed for broadband operation (1880 MHz to 2025 MHz)

Decoupling leads to enable improved video bandwidth

Excellent ruggedness

High efficiency

Excellent thermal stability

Internally matched for ease of use

High power gain

Integrated ESD protection

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications



RF power amplifiers for base station and multi-carrier applications in the 1880 MHz to

2025 MHz frequency range

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