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BAS32L_15

Description
High-speed switching diode
File Size100KB,11 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet View All

BAS32L_15 Overview

High-speed switching diode

BAS32L
High-speed switching diode
Rev. 7 — 20 January 2011
Product data sheet
1. Product profile
1.1 General description
Single high-speed switching diode, fabricated in planar technology, and encapsulated in a
small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package.
1.2 Features and benefits
High switching speed: t
rr
4 ns
Reverse voltage: V
R
75 V
Repetitive peak reverse voltage: V
RRM
100 V
Repetitive peak forward current: I
FRM
450 mA
Small hermetically sealed glass SMD package
1.3 Applications
High-speed switching
Reverse polarity protection
1.4 Quick reference data
Table 1.
Symbol
I
F
I
FRM
V
R
V
F
t
rr
[1]
[2]
Quick reference data
Parameter
forward current
repetitive peak forward
current
reverse voltage
forward voltage
reverse recovery time
I
F
= 100 mA
[2]
Conditions
[1]
Min
-
-
-
-
-
Typ
-
-
-
-
-
Max
200
450
75
1000
4
Unit
mA
mA
V
mV
ns
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
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