SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
PG05FSESC
Single Line TVS Diode for ESD
Protection in Portable Electronics
FEATURES
・100
Watts peak pulse power (tp=8/20μ
s)
・Transient
protection for data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
IEC 61000-4-4(EFT) 40A(tp=5/50ns)
IEC 61000-4-5(Lightning) 10A(tp=8/20μ
s)
・Small
package for use in portable electronics.
・Suitable
replacement for Multi-Layer Varistors in ESD
protection applications.
(* Multi-Layer Varistors [0402 Size])
・Protects
on I/O or power line.
・Low
clamping voltage.
・Low
leakage current.
APPLICATIONS
・Cell
phone handsets and accessories.
・Microprocessor
based equipment.
・Personal
digital assistants (PDA s)
・Notebooks,
desktops, & servers.
・Portable
instrumentation.
・Pagers
peripherals.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Peak Pulse Power (tp=8/20μ
s)
Peak Pulse Current (tp=8/20μ
s)
Junction Temperature
Storage Temperature
SYMBOL
P
PK
I
PP
T
j
T
stg
RATING
100
10
-55½150
-55½150
UNIT
W
A
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Junction Capacitance
SYMBOL
V
RWM
V
BR
I
R
V
C
C
J
I
t
=1mA
V
RWM
=5V
I
PP
=5A, tp=8/20μ
s
I
PP
=10A, tp=8/20μ
s
V
R
=0V, f=1MHz
TEST CONDITION
-
MIN.
-
6
-
-
-
-
TYP.
-
-
-
-
-
-
MAX.
5
-
5
9.8
V
10.0
80
pF
UNIT
V
V
μ
A
2014. 3. 31
Revision No : 2
1/2
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