BFQ18A
NPN 4 GHz wideband transistor
Rev. 03 — 28 September 2007
Product data sheet
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your
cooperation and understanding,
NXP Semiconductors
NXP
Semiconductors
Product specification
NPN 4 GHz wideband transistor
DESCRIPTION
NPN transistor in a plastic SOT89
envelope intended for application in
thick and thin-film circuits. It is
primarily intended for MATV
purposes.
PINNING
PIN
1
2
3
DESCRIPTION
Code: FF
emitter
collector
base
3
2
BFQ18A
1
Fig.1 SOT89.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
f
T
C
re
d
im
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
feedback capacitance
intermodulation distortion
up to T
s
= 155
°C
(note 1)
I
C
= 100 mA; V
CE
= 10 V; f = 500 MHz;
T
j
= 25
°C
I
C
= 0; V
CE
= 10 V; f = 10.7 MHz
I
C
= 80 mA; V
CE
= 10 V; R
L
= 75
Ω;
V
o
= 700 mV; measured at
f
(p+q-r)
= 793.25 MHz
open base
CONDITIONS
open emitter
TYP. MAX. UNIT
−
−
−
−
4
1.2
−
25
18
150
1
−
−
−60
V
V
mA
W
GHz
pF
dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector tab.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
up to T
s
= 155
°C
(note 1)
open emitter
open base
open collector
CONDITIONS
MIN.
−
−
−
−
−
−65
−
MAX.
25
18
2
150
1
150
175
UNIT
V
V
V
mA
W
°C
°C
Rev. 03 - 28 September 2007
2 of 7
NXP
Semiconductors
Product specification
NPN 4 GHz wideband transistor
THERMAL RESISTANCE
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
h
FE
C
c
C
e
C
re
f
T
d
im
Note
1. I
c
= 80 mA; V
CE
= 10 V; R
L
= 75
Ω;
V
p
= V
o
= 700 mV; f
p
=795.25 MHz;
V
q
= V
o
−6
dB; f
q
= 803.25 MHz;
V
r
= V
o
−6
dB; f
r
= 805.25 MHz;
measured at f
(p+q-r)
= 793.25 MHz.
PARAMETER
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
intermodulation distortion (see Fig.2)
CONDITIONS
I
C
= 100 mA; V
CE
= 10 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CE
= 10 V; f = 10.7 MHz
I
C
= 100 mA; V
CE
= 10 V; f = 500 MHz
note 1
MIN.
25
−
−
−
−
−
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to T
s
= 155
°C
(note 1)
BFQ18A
THERMAL RESISTANCE
20 K/W
TYP.
−
2
11
1.2
4
−60
UNIT
pF
pF
pF
GHz
dB
Rev. 03 - 28 September 2007
3 of 7
NXP
Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ18A
MBB361
handbook, halfpage
handbook, halfpage
120
5
µH
200
Ω
5
µH
10 kΩ
L1
10 nF
1.5 nF
VBB
VCC
2.2 nF
h FE
80
10 nF
4.7 nF
DUT
2.2 nF
0.68
pF
12
Ω
0
0
40
80
120
160
I C (mA)
RL
40
0.68 pF
MBB829
f = 40
−
860 MHz.
V
CE
= 10 V; T
j
= 25
°C.
Fig.2 Intermodulation distortion MATV test circuit.
Fig.3
DC current gain as a function of collector
current.
handbook, halfpage
8
MBB357
fT
(GHz)
6
4
2
0
0
40
80
120
I C (mA)
160
V
CE
= 10 V; f = 500 MHz; T
j
= 25
°C.
Fig.4
Transition frequency as a function of
collector current.
Rev. 03 - 28 September 2007
4 of 7
NXP
Semiconductors
Product specification
NPN 4 GHz wideband transistor
PACKAGE OUTLINE
BFQ18A
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
SOT89
D
B
A
b
p3
E
H
E
L
p
1
2
b
p2
w
M
B
b
p1
e
1
e
3
c
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.6
1.4
bp1
0.48
0.35
bp2
0.53
0.40
bp3
1.8
1.4
c
0.44
0.23
D
4.6
4.4
E
2.6
2.4
e
3.0
e1
1.5
HE
4.25
3.75
Lp
1.2
0.8
w
0.13
OUTLINE
VERSION
SOT89
REFERENCES
IEC
JEDEC
TO-243
JEITA
SC-62
EUROPEAN
PROJECTION
ISSUE DATE
06-03-16
06-08-29
Rev. 03 - 28 September 2007
5 of 7
京公网安备 11010802033920号
EEWORLD
