10-FY064PA050SG10-M582F08
flowPACK 1H
Features
●
Low inductive 12mm flow1 package
●
H-Bridge topology
●
High-speed IGBT + ultrafast FWD
●
Temperature sensor
600V/50A
flow
1
Target Applications
●
Solar inverter
●
Power Supply
●
Inverter based welding
Schematic
Types
●
10-FY064PA050SG10-M582F08
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
H-Bridge IGBT
Collector-emitter break down voltage
DC collector current *
Pulsed collector current
Turn off safe operating area
Power dissipation per IGBT *
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
* measured with phase-change material
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°C
V
GE
=15V
V
CE
I
DC
I
Cpulse
T
j
=T
j
max
t
p
limited by T
j
max
VCE
≤
650V, Tj
≤
Top max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
650
46
61
150
150
95
144
±20
5
400
175
V
A
A
A
W
V
µs
V
°C
H-Bridge FWD
Peak Repetitive Reverse Voltage
DC forward current *
Non-repetitive Peak Surge Current
Power dissipation per Diode *
Maximum Junction Temperature
* measured with phase-change material
V
RRM
I
F
I
FSM
P
tot
T
j
max
T
j
=T
j
max
60Hz Single Half-Sine Wave
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
30
39
300
50
76
150
V
A
A
W
°C
copyright
by
Vincotech
1
Revision: 1
10-FY064PA050SG10-M582F08
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°C
°C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Comparative tracking index
CTI
V
is
t=2s
DC voltage
4000
min 12,7
min 12,7
>200
V
mm
mm
copyright
by
Vincotech
2
Revision: 1
10-FY064PA050SG10-M582F08
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
H-Bridge IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
f=1MHz
C
rss
Q
Gate
Phase-Change
Material
Thermal grease
thickness≤50um
λ
= 1 W/mK
15
520
50
Tj=25°C
0
25
Tj=25°C
11
120
nC
Rgoff=8
Ω
Rgon=8
Ω
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
CE
=V
GE
15
0
20
650
0
0,0008
50
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
4,2
1,38
5,1
1,79
1,99
5,8
2,22
0,0028
150
V
V
uA
nA
Ω
none
93
96
19
21
133
148
6
24
0,54
0,79
0,32
0,57
ns
±15
300
50
mWs
3000
pF
Thermal resistance chip to heatsink per chip
R
thJH
1,00
K/W
Thermal resistance chip to heatsink per chip
R
thJH
1,17
K/W
H-Bridge FWD
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
V
F
I
RRM
t
rr
Q
rr
di(rec)max
/dt
30
Rgon=8
Ω
±15
300
50
Erec
Phase-Change
Material
Thermal grease
thickness≤50um
λ
= 1 W/mK
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
2,52
1,84
32
49
16
50
0,29
1,10
9152
5573
0,02
0,13
2,6
V
A
ns
µC
A/µs
mWs
Thermal resistance chip to heatsink per chip
R
thJH
1,39
K/W
Thermal resistance chip to heatsink per chip
R
thJH
1,64
K/W
Thermistor
Rated resistance
Deviation of R25
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
B
(25/50)
B
(25/100)
Tol. ±3%
Tol. ±3%
R
∆R/R
P
R100=1486Ω
Tj=25°C
Tj=100°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
-5
200
2
3950
3996
B
22000
+5
Ω
%
mW
mW/K
K
K
copyright
by
Vincotech
3
Revision: 1
10-FY064PA050SG10-M582F08
H-Bridge
Figure 1
Typical output characteristics
I
C
= f(V
CE
)
180
I
C
(A)
H-Bridge IGBT
Figure 2
Typical output characteristics
I
C
= f(V
CE
)
180
I
C
(A)
H-Bridge IGBT
150
150
120
120
90
90
60
60
30
30
0
0
1
2
3
4
V
CE
(V)
5
0
0
1
2
3
4
V
CE
(V)
5
At
t
p
=
T
j
=
V
GE
from
250
µs
25
°C
7 V to 17 V in steps of 1 V
At
t
p
=
T
j
=
V
GE
from
250
µs
125
°C
7 V to 17 V in steps of 1 V
Figure 3
Typical transfer characteristics
I
C
= f(V
GE
)
50
I
C
(A)
H-Bridge IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
I
F
= f(V
F
)
150
I
F
(A)
H-Bridge FWD
40
120
30
90
T
j
= T
jmax
-25°C
20
60
T
j
= 25°C
10
30
T
j
= T
jmax
-25°C
0
0
2
4
6
T
j
= 25°C
0
8
V
GE
(V)
10
0
1
2
3
4
V
F
(V)
5
At
t
p
=
V
CE
=
250
10
µs
V
At
t
p
=
250
µs
copyright
by
Vincotech
4
Revision: 1
10-FY064PA050SG10-M582F08
H-Bridge
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I
C
)
2,0
E (mWs)
E (mWs)
H-Bridge IGBT
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R
G
)
2,5
H-Bridge IGBT
E
on High T
E
on High T
2,0
1,5
E
on Low T
E
on Low T
1,5
1,0
E
off High T
1,0
E
off Low T
0,5
0,5
E
off High T
E
off Low T
0,0
0
25
50
75
I
C
(A)
100
0,0
0
8
16
24
32
R
G
(
Ω
)
40
With an inductive load at
T
j
=
°C
25/126
V
CE
=
300
V
V
GE
=
±15
V
R
gon
=
8
Ω
R
goff
=
8
Ω
With an inductive load at
T
j
=
°C
25/126
V
CE
=
300
V
V
GE
=
±15
V
I
C
=
50
A
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E
rec
= f(I
C
)
0,2
E (mWs)
H-Bridge FWD
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E
rec
= f(R
G
)
0,2
E (mWs)
H-Bridge FWD
E
rec
0,15
0,15
T
j
= T
jmax
-25°C
T
j
= T
jmax
-25°C
0,1
0,1
E
rec
0,05
0,05
T
j
= 25°C
E
rec
0
T
j
= 25°C
E
rec
0
0
25
50
75
I
C
(A)
100
0
8
16
24
32
R
G
(
Ω
)
40
With an inductive load at
T
j
=
°C
25/126
V
CE
=
300
V
V
GE
=
±15
V
R
gon
=
8
Ω
With an inductive load at
T
j
=
25/126
°C
V
CE
=
300
V
V
GE
=
±15
V
I
C
=
50
A
copyright
by
Vincotech
5
Revision: 1
京公网安备 11010802033920号
EEWORLD
