IRF7410TRPbF-1
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= -4.5V)
-12
7
9
13
91
-16
V
S
1
2
3
4
8
7
A
D
D
D
D
S
R
DS(on) max
(@V
GS
= -2.5V)
mΩ
S
G
6
5
R
DS(on) max
(@V
GS
= -1.8V)
Q
g (typical)
I
D
(@T
A
= 25°C)
nC
A
Top View
SO-8
Features
Benefits
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF7410PbF-1
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRF7410TRPbF-1
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-12
-16
-13
-65
2.5
1.6
20
±8
-55 to +150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
50
Units
°C/W
1
www.irf.com
©
2014 International Rectifier
Submit Datasheet Feedback
October 16, 2014
IRF7410TRPbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Min.
-12
–––
–––
–––
–––
-0.4
–––
55
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
0.006
–––
–––
–––
–––
-3.09
–––
–––
–––
–––
–––
91
18
25
13
12
271
200
8676
2344
1604
20
18
407
300
–––
–––
–––
pF
ns
–––
nC
–––
–––
7
9
13
-0.9
–––
–––
-1.0
-25
-100
100
μA
nA
V
mΩ
V
Conditions
V
GS
= 0V, I
D
= -250μA
V
GS
= -4.5V, I
D
= -16A
V
GS
= -2.5V, I
D
V
GS
= -1.8V, I
D
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
ΔV
GS(th)
/ΔT
J
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V/°C Reference to 25°C, I
D
= -1mA
d
= -13.6A
d
= -11.5A
d
V
DS
= V
GS
, I
D
= -250μA
mV/°C
S
V
DS
= -10V, I
D
= -16A
V
DS
= -9.6V, V
GS
= 0V
V
DS
= -9.6V, V
GS
= 0V, T
J
= 70°C
V
GS
= -8V
V
GS
= 8V
I
D
= -16A
V
DS
=-9.6V
V
GS
= -4.5V
I
D
=-1.0A
R
D
= 6Ω
R
G
= 6Ω
V
GS
= 0V
V
DD
= -6V V
GS
= -4.5V
d
d
V
DS
= -10V
ƒ = 1.0 MHz
Source-Drain Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
–––
97
134
-2.5
A
-65
-1.2
145
201
V
ns
μC
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
S
p-n junction diode.
T
J
= 25°C, I
S
= -2.5A, V
GS
= 0V
T
J
= 25°C
I
F
= -2.5A
di/dt = -100A/μs
d
d
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width
≤
400μs; duty cycle
≤
2%.
Surface mounted on 1 in square Cu board, t
≤
10sec.
2
www.irf.com
©
2014 International Rectifier
Submit Datasheet Feedback
October 16, 2014
IRF7410TRPbF-1
100
TOP
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
-1.0V
100
TOP
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
-1.0V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
10
-1.0V
-1.0V
1
≤
60μs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
1
0.1
1
≤
60μs PULSE WIDTH
Tj = 150°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
100
2.0
I
D
= -16A
ID, Drain-to-Source Current (A)
10
T J = 25°C
1.5
1
TJ = 150°C
1.0
0.1
VDS = -10V
≤60μs
PULSE WIDTH
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0.5
0.0
-60 -40 -20
V
GS
= -4.5V
0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
3
www.irf.com
©
2014 International Rectifier
Fig 4.
Normalized On-Resistance
Vs. Temperature
Submit Datasheet Feedback
October 16, 2014
IRF7410TRPbF-1
14000
12000
-V
GS
, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
6
I
D
=
-16A
V
DS
=-9.6V
5
C, Capacitance(pF)
10000
8000
6000
4000
2000
0
1
Ciss
Coss = Cds + Cgd
4
3
Coss
Crss
2
1
0
10
100
0
20
40
60
80
100
120
-VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
-I
SD
, Reverse Drain Current (A)
T
J
= 150
°
C
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
-I
D
, Drain Current (A)
I
100
100us
T
J
= 25
°
C
1
1ms
10
10ms
0.1
0.2
V
GS
= 0 V
0.4
0.6
0.8
1.0
1
0.1
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
1
10
100
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
©
2014 International Rectifier
Fig 8.
Maximum Safe Operating Area
Submit Datasheet Feedback
October 16, 2014
IRF7410TRPbF-1
16
V
DS
V
GS
R
D
-I
D
, Drain Current (A)
12
8
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
4
Fig 10a.
Switching Time Test Circuit
t
d(on)
t
r
t
d(off)
t
f
V
GS
0
25
50
T
C
, Case Temperature ( °C)
75
100
125
150
10%
Fig 9.
Maximum Drain Current Vs.
Case Temperature
90%
V
DS
Fig 10b.
Switching Time Waveforms
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
P
DM
0.1
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
100
Thermal Response(Z
thJA
)
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
www.irf.com
©
2014 International Rectifier
Submit Datasheet Feedback
October 16, 2014
+
-
R
G
D.U.T.
V
DD
京公网安备 11010802033920号
EEWORLD
