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IRF7413PBF-1_15

Description
POWER, FET
Categorysemiconductor    Discrete semiconductor   
File Size245KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

IRF7413PBF-1_15 Overview

POWER, FET

IRF7413PBF-1_15 Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeuniversal power supply
IRF7413PbF-1
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
30
0.011
52
13
V
Ω
nC
A
S
S
S
G
1
2
3
4
8
7
A
A
D
D
D
D
Q
g (typical)
I
D
(@T
A
= 25°C)
6
5
Top View
SO-8
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF7413PbF-1
Package Type
SO-8
Standard Pack
Form
Tube/Bulk
Tape and Reel
Quantity
95
4000
Orderable Part Number
IRF7413PbF-1
IRF7413TRPbF-1
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
E
AS
dv/dt
T
J,
T
STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max
30
± 20
13
9.2
58
2.5
0.02
260
5.0
-55 to +150
Units
V
c
A
W
mW/°C
mJ
V/ns
°C
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energency
Peak Diode Recovery dv/dt
d
e
Typ
–––
–––
Junction and Storage Temperature Range
Thermal Resistance Ratings
Symbol
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Max
20
50
Units
°C/W
g
1
www.irf.com
©
2013 International Rectifier
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