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SZM3166ZPCK-EVB1

Description
3.3GHz to 3.6GHz 2W POWER AMPLIFIER
File Size326KB,12 Pages
ManufacturerRF Micro Devices (Qorvo)
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SZM3166ZPCK-EVB1 Overview

3.3GHz to 3.6GHz 2W POWER AMPLIFIER

SZM-3166Z
3.3GHz to
3.6GHz 2W
Power Ampli-
fier
SZM-3166Z
3.3GHz to 3.6GHz 2W POWER AMPLIFIER
Package: QFN, 6mmx6mm
Product Description
RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier
housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT
amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an
ideal combination of low cost and high reliability. This product is specifically designed for
802.16 customer premises equipment (CPE) terminals in the 3.3GHz to 3.6GHz bands. It can
run from a 3V to 5.2V supply. The external output match and bias adjustability allows load line
optimization for other applications covering 3.5GHz to 3.8GHz. It features an output power
detector, on/off power control and high RF overdrive robustness. A 20dB step attenuator fea-
ture can be utilized by switching the second stage Power up/down control. This product fea-
tures a RoHS compliant and Green package with matte tin finish, designated by the ‘Z’ suffix.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
Vcc = 5V
Features
P
1dB
=35dBm at 5.2V
Three Stages of Gain:35dB
802.11g 54Mb/s Class AB Perfor-
mance
P
OUT
=27dBm at 2.5% EVM, V
CC
5.2V, 900mA
Active Bias with Adjustable Current
On-Chip Output Power Detector
Low Thermal Resistance
Power Up/Down Control <1s
Attenuator Step 20dB at V
PC2
=0V
Class 1C ESD Rating
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Power
Up/Down
Control
Power
Detector
Vbias = 5V
Stage 1
Bias
Stage 2
Bias
Stage 3
Bias
RFIN
RFOUT
Applications
802.16 WiMAX Driver or Output
Stage
Fixed Wireless, WLL
CPE Terminal Applications
Parameter
Frequency of Operation
Output Power at 1dB Compression
Gain
% EVM
Third Order Suppression
Noise Figure
Worst Case Input Return Loss
Worst Case Output Return Loss
Supply voltage rang
Output Voltage Range
Quiescent Current
Power Up Control Current
V
CC
Leakage Current
Min.
3300
32.0
Specification
Typ.
34.5
35.0
2.5
-42
5.0
14.0
9.0
5.2
0.9 to 2.2
800
5.0
Max.
3600
38.0
-37
Unit
MHz
dBm
dBm
%
dBc
dB
dB
dB
V
V
Condition
3.5Ghz
3.5Ghz, P
OUT
=26dBm
3.5GHz, P
OUT
=27dBm, 802.11g 54Mb/s
3.5GHz, P
OUT
=23dBm per tone
3.5GHz
2.3GHz to 3.5GHz
2.3GHz to 3.5GHz
P
OUT
=10dBm to 33dBm
V
CC
=5.2V
V
PC
=5.2V, I
VCP1
+I
VPC2
+I
VPC3
V
CC
=5.2V, V
PC
=0V
junction - lead
11.0
6.0
720
880
0.1
mA
mA

°C/W
Thermal Resistance
12.0
Test Conditions: Z
0
=50, V
CC
=5.2V, I
Q
=800mA, T
BP
=30°C
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS110620
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 12

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