DMP6250SE
60V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
ADVANCE INFORMATION
NEW PRODUCT
V
(BR)DSS
-60V
R
DS(on)
250mΩ @ V
GS
= -10V
300mΩ @ V
GS
= -4.5V
I
D
T
A
= +25°C
-2.1A
-1.9A
Features and Benefits
•
•
•
•
•
•
Low gate drive
Low input capacitance
Fast switching speed
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
Mechanical Data
•
•
•
•
•
•
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See diagram below
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.112 grams (approximate)
Applications
•
•
•
•
Motor Control
DC-DC Converters
Power Management Functions
Uninterrupted Power Supply
SOT223
D
G
S
Top View
Pin Out - Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMP6250SE-13
Notes:
Qualification
Standard
Case
SOT223
Packaging
2,500 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
= Manufacturer’s Marking
P6250 = Marking Code
YWW = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YWW = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y= Year (ex: 3 = 2013)
WW = Week (01 - 53)
YWW
P6250
YWW
P6250
DMP6250SE
Document Number DS36696 Rev. 1 - 2
1 of 6
www.diodes.com
January 2014
© Diodes Incorporated
DMP6250SE
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
ADVANCE INFORMATION
NEW PRODUCT
Drain-Source voltage
Gate-Source voltage (Note 5)
T
A
= +25°C
T
A
= +70°C
T
C
= +25°C
T
C
= +70°C
Symbol
V
DSS
V
GS
I
D
I
D
I
S
I
DM
I
AS
E
AS
Value
-60
±20
-2.1
-1.7
-6.1
-4.9
-1.8
-11
-12
8
Unit
V
V
A
A
A
A
A
mJ
Continuous Drain current (Note 6) V
GS
= -10V
Maximum Body Diode Continuous Current
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Single Pulsed Avalanche Current (Note 7) L = 0.1mH
Single Pulsed Avalanche Energy (Note 7) L = 0.1mH
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T
A
= +25°C
T
A
= +70°C
T
C
= +25°C
Symbol
P
D
R
θJA
P
D
R
θJC
T
J,
T
STG
Value
1.8
1.1
69
14
8.7
-55 to +150
Units
W
°C/W
W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
(Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse recovery time
Reverse recovery charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Min
-60
⎯
⎯
-1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
551
25.7
19.1
12.1
4.8
9.7
1.5
1.6
6.3
10.3
91.4
39.8
9.2
3.9
Max
⎯
-1
±100
-3
250
300
-1.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
µA
nA
V
mΩ
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Test Condition
I
D
= -250µA, V
GS
= 0V
V
DS
= -60V, V
GS
= 0V
V
GS
=
±20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -1.0A
V
GS
= -4.5V, I
D
= -0.5A
V
GS
= 0V, I
S
= -2.0A
V
DS
= -30V, V
GS
= 0V
f= 1MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= -30V, I
D
= -2A
V
DS
= -30V, V
GS
= -10V,
R
G
= 50Ω, I
D
= -1A
I
S
= -1A, di/dt= 100A/µs
5. AEC-Q101 V
GS
maximum is
±16V.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAR and EAR rating are based on low frequency and duty cycles to keep T
J
= 25°C
8. Short duration pulse test used to minimize self-heating effect.
9. For design aid only, not subject to production testing.
DMP6250SE
Document Number DS36696 Rev. 1 - 2
2 of 6
www.diodes.com
January 2014
© Diodes Incorporated
DMP6250SE
10
V
GS
= -10V
8
V
DS
= -5.0V
7
8
ADVANCE INFORMATION
NEW PRODUCT
-I
D
, DRAIN CURRENT (A)
-I
D
, DRAIN CURRENT (A)
V
GS
= -4.5V
V
GS
= -4.0V
6
5
4
3
2
1
T
A
= 150
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= -55
°
C
6
4
2
V
GS
= -3.0V
T
A
= 125
°
C
0
V
GS
= -2.5V
0
1
2
3
4
-V
DS
, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
5
0
0
1
2
3
4
-V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
I
D
= -1.0A
5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.36
0.32
0.28
0.24
0.2
0.16
0.12
0.08
0.04
00
2
4
6
8
-I
D
, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
V
GS
= -10V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.4
0.5
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0
2
4
6
8
10 12 14 16 18
-V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
20
I
D
= -0.5A
V
GS
= -4.5V
V
GS
= -10V
10
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.5
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0
1
2
3
4
5
6
7
-I
D
, DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
8
T
A
= 25
°
C
T
A
= 125
°
C
T
A
= 85
°
C
1.8
V
GS
= -10V
I
D
= -1.0A
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
T
A
= 150
°
C
1.6
1.4
V
GS
= -4.5V
I
D
= -0.5A
1.2
1
T
A
= -55
°
C
0.8
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6 On-Resistance Variation with Temperature
DMP6250SE
Document Number DS36696 Rev. 1 - 2
3 of 6
www.diodes.com
January 2014
© Diodes Incorporated
DMP6250SE
R
DS(on)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 7 On-Resistance Variation with Temperature
V
GS
= -10V
I
D
= -1.0A
V
GS
= -4.5V
I
D
= -0.5A
2.6
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
2.4
2.2
2
-I
D
= 250µA
ADVANCE INFORMATION
NEW PRODUCT
-I
D
= 1mA
1.8
1.6
1.4
1.2
-50
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10
9
-I
S
, SOURCE CURRENT (A)
8
7
6
5
4
3
2
1
0
T
A
= -55°C
T
A
= 125°C
T
A
= 25°C
T
A
= 150°C
T
A
= 85°C
1000
C
iss
C
T
, JUNCTION CAPACITANCE (pF)
f = 1MHz
100
C
oss
C
rss
0
0.3
0.6
0.9
1.2
1.5
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
0
5
10
15
20
25
30
35
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
R
DS(on)
Limited
40
10
100
-V
GS
, GATE-SOURCE VOLTAGE (V)
8
-I
D
, DRAIN CURRENT (A)
10
6
V
DS
= -30V
I
D
= -2A
1
DC
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
P
W
= 100µs
4
2
0.1
T
J(max)
= 150°C
0
0
2
4
6
8
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
10
0.01
0.1
T
A
= 25°C
V
GS
= -10V
Single Pulse
DUT on 1 * MRP Board
1
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
DMP6250SE
Document Number DS36696 Rev. 1 - 2
4 of 6
www.diodes.com
January 2014
© Diodes Incorporated
DMP6250SE
1
D = 0.9
D = 0.7
D = 0.5
ADVANCE INFORMATION
NEW PRODUCT
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Single Pulse
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 100°C/W
Duty Cycle, D = t1/ t2
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Figure 13 Transient Thermal Resistance
10
100
1000
0.001
0.00001
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
SOT223
Dim Min Max Typ
A
1.55 1.65 1.60
A1
0.010 0.15 0.05
b1
2.90 3.10 3.00
b2
0.60 0.80 0.70
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
—
—
4.60
e1
—
—
2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
A
A1
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Y1
C1
Y2
X2
C2
Dimensions
X1
X2
Y1
Y2
C1
C2
Value (in mm)
3.3
1.2
1.6
1.6
6.4
2.3
DMP6250SE
Document Number DS36696 Rev. 1 - 2
5 of 6
www.diodes.com
January 2014
© Diodes Incorporated
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