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CMLT8099_15

Description
SURFACE MOUNT SILICON DUAL NPN TRANSISTOR
File Size504KB,3 Pages
ManufacturerCentral Semiconductor
Download Datasheet View All

CMLT8099_15 Overview

SURFACE MOUNT SILICON DUAL NPN TRANSISTOR

CMLT8099
w w w. c e n t r a l s e m i . c o m
SURFACE MOUNT SILICON
DUAL NPN TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT8099
consists of two individual, isolated 8099 NPN silicon
transistors, manufactured by the epitaxial planar
process and epoxy molded in an SOT-563 surface
mount package. This device has been designed for
small signal general purpose amplifier applications.
MARKING CODE: C89
SOT-563 CASE
APPLICATIONS:
• Small signal general purpose amplifiers
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
FEATURES:
• Device is
Halogen Free
by design
• Current IC=500mA
• Voltage VCEO=80V
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
80
80
6.0
500
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=80V
0.1
IEBO
VBE=6.0V
0.1
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(ON)
hFE
hFE
hFE
fT
Cob
Cib
IC=100μA
IC=10mA
IE=10μA
IC=100mA, IB=5.0mA
IC=100mA, IB=10mA
VCE=5.0V,
VCE=5.0V,
IC=10mA
IC=1.0mA
0.6
100
100
75
150
6.0
25
80
80
6.0
0.4
0.3
0.8
300
UNITS
μA
μA
V
V
V
V
V
V
VCE=5.0V, IC=10mA
VCE=5.0V, IC=100mA
VCE=5.0V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VBE=0.5V, IC=0, f=1.0MHz
MHz
pF
pF
R3 (29-June 2015)
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