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UPC8179

Description
100 MHz - 2400 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
CategoryTopical application    Wireless rf/communication   
File Size136KB,28 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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UPC8179 Overview

100 MHz - 2400 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

UPC8179 Parametric

Parameter NameAttribute value
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum input power5 dBm
Maximum operating frequency2400 MHz
Minimum operating frequency100 MHz
Processing package descriptionMINI, PLASTIC, SO-6
stateTRANSFERRED
structureCOMPONENT
terminal coatingTIN LEAD
Impedance characteristics50 ohm
Microwave RF TypeWIDE BAND LOW POWER
DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µ
PC8179TB
SILICON MMIC LOW CURRENT AMPLIFIER
FOR MOBILE COMMUNICATIONS
DESCRIPTION
The
µ
PC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This
IC can realize low current consumption with external chip inductor which can not be realized on internal 50
wideband matched IC. This low current amplifier operates on 3.0 V.
This IC is manufactured using NEC’s 30 GHz f
max
UHS0 (Ultra High Speed Process) silicon bipolar process. This
process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface
from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• Low current consumption
• Supply voltage
• High efficiency
: I
CC
= 4.0 mA TYP. @ V
CC
= 3.0 V
: V
CC
= 2.4 to 3.3 V
: P
O (1 dB)
= +3.0 dBm TYP. @ f = 1.0 GHz
P
O (1 dB)
= +1.5 dBm TYP. @ f = 1.9 GHz
P
O (1 dB)
= +1.0 dBm TYP. @ f = 2.4 GHz
• Power gain
: G
P
= 13.5 dB TYP. @ f = 1.0 GHz
G
P
= 15.5 dB TYP. @ f = 1.9 GHz
G
P
= 15.5 dB TYP. @ f = 2.4 GHz
• Excellent isolation
: ISL = 44 dB TYP. @ f = 1.0 GHz
ISL = 42 dB TYP. @ f = 1.9 GHz
ISL = 41 dB TYP. @ f = 2.4 GHz
• Operating frequency
• Light weight
: 0.1 to 2.4 GHz (Output port LC matching)
: 7 mg (Standard value)
• High-density surface mounting : 6-pin super minimold package (2.0
×
1.25
×
0.9 mm)
APPLICATION
• Buffer amplifiers on 0.1 to 2.4 GHz mobile communications system
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14730EJ2V0DS00 (2nd edition)
Date Published August 2000 N CP(K)
Printed in Japan
©
2000

UPC8179 Related Products

UPC8179 UPC8179TB-E3
Description 100 MHz - 2400 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 100 MHz - 2400 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Maximum operating temperature 85 Cel 85 Cel
Minimum operating temperature -40 Cel -40 Cel
Maximum input power 5 dBm 5 dBm
Maximum operating frequency 2400 MHz 2400 MHz
Minimum operating frequency 100 MHz 100 MHz
Processing package description MINI, PLASTIC, SO-6 MINI, PLASTIC, SO-6
state TRANSFERRED TRANSFERRED
structure COMPONENT COMPONENT
terminal coating TIN LEAD TIN LEAD
Impedance characteristics 50 ohm 50 ohm
Microwave RF Type WIDE BAND LOW POWER WIDE BAND LOW POWER

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