DMN3110S
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
73mΩ @ V
GS
= 10V
I
D
max
T
A
= +25°C
3.3A
2.7A
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
NEW PRODUCT
30V
110mΩ @ V
GS
= 4.5V
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
General Purpose Interfacing Switch
Power Management Functions
Boost Application
Analog Switch
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish
NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.027 grams (approximate)
Ordering Information
(Note 4)
Part Number
DMN3110S-7
Notes:
Case
SOT-23
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
MN7 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
̅
Y or Y = Year (ex: A = 2013)
̅
M = Month (ex: 9 = September)
Chengdu A/T Site
Date Code Key
Year
Code
Month
Code
2007
U
Jan
1
2008
V
Feb
2
Shanghai A/T Site
2009
W
Mar
3
2010
X
Apr
4
2011
Y
May
5
Jun
6
2012
Z
Jul
7
2013
A
Aug
8
2014
B
Sep
9
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
DMN3110S
Document number: DS31561 Rev. 3 - 2
1 of 6
www.diodes.com
October 2013
© Diodes Incorporated
DMN3110S
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
Steady
State
t≦10sec
Steady
State
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
DM
Value
30
±20
2.5
2.0
3.3
2.7
3.8
3.1
2.7
2.1
25
Units
V
V
A
A
A
A
A
NEW PRODUCT
Continuous Drain Current (Note 6) V
GS
= 10V
Continuous Drain Current (Note 6) V
GS
= 10V
Continuous Drain Current (Note 6) V
GS
= 4.5V
Pulsed Drain Current (Note 7)
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol
P
D
R
JA
P
D
R
JA
P
D
R
JA
T
J,
T
STG
Value
0.74
173.4
1.3
99.1
1.8
72
-55 to +150
Units
W
°C/W
W
°C/W
W
°C/W
°C
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 6) t≦10sec
Thermal Resistance, Junction to Ambient (Note 6) t≦10sec
Operating and Storage Temperature Range
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
30
-
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
54
88
4.8
0.75
305.8
39.9
39.5
1.4
4.1
8.6
1.2
1.5
2.6
4.6
13.1
2.5
Max
-
1.0
±100
3.0
73
110
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
μA
nA
V
mΩ
mS
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 3.1A
V
GS
= 4.5V, I
D
= 2A
V
DS
= 10V, I
D
= 3.1A
V
GS
= 0V, I
S
= 1A
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V,f = 1.0MHz
V
GS
= 10V, V
DS
= 10V,
I
D
= 3A
@T
C
= +25°C
V
DD
= 15V, V
GS
= 10V,
R
L
= 47Ω, R
G
= 3Ω,
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, on 1inch square copper plate
7. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN3110S
Document number: DS31561 Rev. 3 - 2
2 of 6
www.diodes.com
October 2013
© Diodes Incorporated
DMN3110S
10.0
V
GS
=4.0V
10
V
DS
= 5.0V
T
A
= 150
C
T
A
= 125
C
8.0
I
D
, DRAIN CURRENT (A)
V
GS
=4.5V
8
I
D
, DRAIN CURRENT (A)
T
A
= 25
C
6.0
V
GS
=3.5V
6
T
A
= 85
C
NEW PRODUCT
4.0
V
GS
=10V
V
GS
=3.0V
4
T
A
= -55
C
2.0
V
GS
=2.5V
2
0.0
0
0.5
1.5 2 2.5 3 3.5 4 4.5
V
DS
, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
1
5
0
0
2
3
4
V
GS
, GATE SOURCE VOLTAGE(V)
Fig. 2 Typical Transfer Characteristics
1
5
R
DS(ON)
,DRAIN-SOURCE ON-RESISTANCE(
)
1
0.16
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE(
)
V
GS
= 4.5V
0.12
T
A
= 125
C
T
A
= 150
C
0.1
0.08
T
A
= 85
C
T
A
= 25
C
0.04
T
A
= -55
C
0.01
0
4
8
12
16
20
0
0
2
4
6
8
10
I
D
, DRAIN SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
I
D
, DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
1.6
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(Normalized)
0.1
V
GS
=4.5V
I
D
=5A
1.4
0.08
1.2
0.06
1
0.04
V
GS
=10V
I
D
=10A
0.8
0.02
0.6
-50
-25
0
25
50
75
100
125
150
0
-50
T
J
, JUNCTION TEMPERATURE (
C)
Fig. 5 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Fig. 6 On-Resistance Variation with Temperature
DMN3110S
Document number: DS31561 Rev. 3 - 2
3 of 6
www.diodes.com
October 2013
© Diodes Incorporated
DMN3110S
2.4
V
GS(TH)
, GATE THRESHOLD VOLTAGE(V)
10
2
I
S
, SOURCE CURRENT (A)
8
T
A
= 25
C
1.6
6
NEW PRODUCT
1.2
4
0.8
0.4
0
-50
2
0
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
1000
f = 1MHz
-25
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
10000
C
T
, JUNCTION CAPACITANCE (pF)
C
ISS
I
DSS
, LEAKAGE CURRENT (nA)
1000
T
A
=150°C
T
A
=125°C
100
T
A
=85°C
100
10
C
OSS
C
RSS
1
T
A
=-55°C
T
A
=25°C
10
0
5
10
15
20
25
30
0.1
0
2
4
6 8 10 12 14 16 18 20 22 24 26 28 30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
V
DS
, DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
10
V
GS
, GATE-SOURCE VOLTAGE (V)
8
6
4
2
0
0
2
4
6
8
Q
g
, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
10
DMN3110S
Document number: DS31561 Rev. 3 - 2
4 of 6
www.diodes.com
October 2013
© Diodes Incorporated
DMN3110S
1
r(t), TRANSIENT THERMAL RESISTANCE
0.1
NEW PRODUCT
0.01
R
JA
(t)=r(t) * R
JA
R
JA
=54°C/W
Duty Cycle, D=t1/ t2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 12 Transient Thermal Resistance
10
100
1000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
H
J
K
A ll 7 °
G A U G E P L A N E
0 . 2 5
K 1
a
A
M
L
L 1
C
B
D
F
G
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
8°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
2.0
C
1.35
E
X
E
DMN3110S
Document number: DS31561 Rev. 3 - 2
5 of 6
www.diodes.com
October 2013
© Diodes Incorporated
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