DMN4008LFG
40V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
®
Product Summary
ADVANCE INFORMATION
NEW PRODUCT
V
(BR)DSS
40V
R
DS(ON)
max
7.5mΩ @ V
GS
= 10V
10mΩ @ V
GS
= 4.5V
I
D
max
T
A
= +25°C
14.4A
12.5A
Features and Benefits
•
•
•
•
Low R
DS(ON)
– ensures on state losses are minimized
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
Occupies Just 33% of the Board Area Occupied by SO-8 Enabling
Smaller End Product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
•
•
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
•
•
•
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
•
•
•
•
•
•
Case: POWERDI 3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish
⎯
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (approximate)
®
POWERDI 3333-8
S
Pin 1
S
S
G
®
D
G
D
D
D
D
S
Top View
Equivalent Circuit
Bottom View
Ordering Information
(Note 4)
Part Number
DMN4008LFG-7
DMN4008LFG-13
Notes:
Case
®
POWERDI 3333-8
®
POWERDI 3333-8
Packaging
2000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N47
POWERDI is a registered trademark of Diodes Incorporated
YYWW
N47= Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 13 = 2013)
WW = Week code (01 ~ 53)
DMN4008LFG
Document number: DS36908 Rev. 2 - 2
1 of 6
www.diodes.com
July 2014
© Diodes Incorporated
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Symbol
V
DSS
V
GSS
Steady
State
t<10s
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current, L = 0.1mH
Avalanche Energy, L = 0.1mH
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
I
D
I
D
I
DM
I
S
I
AS
E
AS
Value
40
±20
14.4
11.6
19.2
15.4
90
3
38
75
DMN4008LFG
Units
V
V
A
A
A
A
A
mJ
ADVANCE INFORMATION
NEW PRODUCT
Continuous Drain Current (Note 6) V
GS
= 10V
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Steady state
t<10s
Steady state
t<10s
Symbol
P
D
R
θJA
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
1.0
119
66
2.3
53
30
6.1
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Min
40
—
—
1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
5.5
7
—
0.7
3537
257
215
0.9
34
74
10.2
12.5
8.2
14.1
69.7
24.4
18.5
12.0
Max
—
1
±100
3
7.5
10
20
1.1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
nA
V
mΩ
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
nS
nC
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 40V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 10A
V
GS
= 4.5V, I
D
= 8A
V
GS
= 3.3V, I
D
= 6A
V
GS
= 0V, I
S
= 1A
V
DS
= 20V, V
GS
= 0V,
f = 1MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 20V, I
D
= 10A
V
GS
= 10V, V
DS
= 20V,
R
G
= 6Ω, I
D
= 10A
I
F
= 10A, di/dt = 100A/μs
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated
DMN4008LFG
Document number: DS36908 Rev. 2 - 2
2 of 6
www.diodes.com
July 2014
© Diodes Incorporated
DMN4008LFG
30.0
27.0
24.0
I
D
, DRAIN CURRENT (A)
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 3.5V
V
GS
= 3.0V
30
27
24
I
D
, DRAIN CURRENT (A)
21
18
15
12
9
6
V
GS
= 2.5V
V
DS
= 5.0V
ADVANCE INFORMATION
NEW PRODUCT
21.0
18.0
15.0
12.0
9.0
6.0
3.0
0.0
0
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
3
5
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
1
0
1
1.5
2
2.5
3
3.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
4
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.014
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
I
D
= 10.0A
I
D
= 8.0A
0.012
V
GS
= 3.3V
0.01
0.008
V
GS
= 4.5V
V
GS
= 10V
0.006
0.004
0.002
0
2
4
6
8 10 12 14 16 18
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
20
0
2
4
6
8 10 12 14 16 18
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
20
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.011
0.01
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0
V
GS
= 10V
T
A
= 150°C
T
A
= 125°C
1.8
V
GS
= 10V
I
D
= 10A
V
GS
= 4.5V
I
D
= 8.0A
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.6
T
A
= 85°C
1.4
1.2
V
GS
= 3.3V
I
D
= 6.0A
T
A
= 25°C
1
T
A
= -55°C
0.8
2
6
8 10 12 14 16 18
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
4
20
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6 On-Resistance Variation with Temperature
POWERDI is a registered trademark of Diodes Incorporated
DMN4008LFG
Document number: DS36908 Rev. 2 - 2
3 of 6
www.diodes.com
July 2014
© Diodes Incorporated
DMN4008LFG
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.018
2.2
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
2
1.8
1.6
1.4
1.2
1
0.8
-50
I
D
= 1mA
0.016
0.014
0.012
0.01
0.008
0.006
0.004
0.002
0
-50
V
GS
= 10V
I
D
= 10A
V
GS
= 4.5V
I
D
= 8.0A
V
GS
= 3.3V
I
D
= 6.0A
ADVANCE INFORMATION
NEW PRODUCT
I
D
= 250µA
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 7 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 8 Gate Threshold Variation
vs. Ambient Temperature
150
30
27
I
S
, SOURCE CURRENT (A)
24
21
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
10000
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
18
15
12
9
6
3
0
0
1000
C
oss
C
rss
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
100
f = 1MHz
0
5
10
15
20
25
30
35
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
40
10
V
GS
GATE THRESHOLD VOLTAGE (V)
V
DS
= 20V
I
D
= 10A
1000
R
DS(ON)
Limited
8
100
I
D
, DRAIN CURRENT (A)
6
10
DC
P
W
= 10s
P
W
= 1s
P
W
= 100ms
4
1
2
0.1
0
0
10
20
30
40
50
60
70
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
80
0.01
0.01
T
J(max)
= 150°C
T
A
= 25°C
V
GS
= 10V
Single Pulse
DUT on 1 * MRP Board
P
W
= 10ms
P
W
= 1ms
P
W
= 100µs
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
POWERDI is a registered trademark of Diodes Incorporated
DMN4008LFG
Document number: DS36908 Rev. 2 - 2
4 of 6
www.diodes.com
July 2014
© Diodes Incorporated
DMN4008LFG
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.9
D = 0.7
D = 0.5
D = 0.3
ADVANCE INFORMATION
NEW PRODUCT
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 118°C/W
Duty Cycle, D = t1/ t2
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
100
1000
0.001
0.0001
0.001
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
A1
D
D2
L
(4x)
A3
Pin 1 ID
E
E2
1
4
b2
(4x)
8
5
L1
(3x)
Z (4x)
e
b (8x)
POWERDI 3333-8
Dim Min Max Typ
D
3.25 3.35 3.30
E
3.25 3.35 3.30
D2
2.22 2.32 2.27
E2
1.56 1.66 1.61
A
0.75 0.85 0.80
A1
0
0.05 0.02
A3
0.203
−
−
b
0.27 0.37 0.32
b2
0.20
−
−
L
0.35 0.45 0.40
L1
0.39
−
−
e
0.65
−
−
Z
0.515
−
−
All Dimensions in mm
®
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
G
Y2
8
G1
5
Y1
Y
1
Y3
X2
C
4
Dimensions
C
G
G1
Y
Y1
Y2
Y3
X
X2
Value (in mm)
0.650
0.230
0.420
3.700
2.250
1.850
0.700
2.370
0.420
POWERDI is a registered trademark of Diodes Incorporated
DMN4008LFG
Document number: DS36908 Rev. 2 - 2
5 of 6
www.diodes.com
July 2014
© Diodes Incorporated
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