DMN4031SSD
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
ADVANCE INFORMATION
V
(BR)DSS
40V
R
DS(ON)
max
31mΩ @ V
GS
= 10V
50mΩ @ V
GS
= 4.5V
I
D
max
T
A
= +25°C (Note 5)
7.0A
5.6A
Features and Benefits
•
•
•
•
•
Low On-Resistance
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
•
•
•
•
Motor control
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
•
•
•
•
•
•
SO-8
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish
⎯
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.072 grams (approximate)
D1
S2
G2
S1
G1
Top View
Top View
Internal Schematic
D2
D2
D2
D1
D1
G1
S1
N-channel MOSFET
G2
S2
N-channel MOSFET
Ordering Information
(Note 4)
Part Number
DMN4031SSD-13
Notes:
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
N4031SD
YY WW
1
4
1
N4031SD
YY WW
4
= Manufacturer’s Marking
N4031SD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Chengdu A/T Site
Shanghai A/T Site
DMN4031SSD
Document number: DS35410 Rev. 4 - 2
1 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMN4031SSD
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
ADVANCE INFORMATION
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
Continuous Drain Current (Note 5)
Continuous Drain Current (Note 6)
Continuous Drain Current (Note 6)
Pulsed Drain Current (Note 7)
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 10V
V
GS
= 4.5V
Steady
State
Steady
State
Steady
State
Steady
State
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
DM
Value
40
±20
5.2
4.1
4.3
3.4
7.0
5.6
5.8
4.7
20
Units
V
V
A
A
A
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 6)
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
P
D
R
θJA
T
J,
T
STG
Value
1.42
88
2.6
48
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
On-state drain current
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
T
D(on)
T
r
T
D(off)
T
f
Min
40
—
—
1.6
20
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
2.4
—
19
44
11
0.74
945
69
58
1.45
8.4
18.6
3.3
2.2
6.4
9.7
19.8
3.1
Max
—
1
±100
3.0
—
31
50
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
μA
nA
V
A
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 10mA
V
DS
= 40V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, V
DS
= 5A
V
GS
= 10V, I
D
= 6A
V
GS
= 4.5V, I
D
= 5A
V
DS
= 5V, I
D
= 6A
V
GS
= 0V, I
S
= 1A
V
DS
= 20V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
GS
= 10V, V
DS
= 20V,
I
D
= 12A
V
GS
= 10V, V
DS
= 20V,
R
L
= 1.6Ω, R
G
= 3Ω
5. Device mounted on FR-4 PCB, with minimum recommended pad layout. The value in any given application depends on user’s specific board design
6. Device mounted on 1” x 1” FR-4PCB with high coverage 1 oz. Copper, single sided.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect
9. Guaranteed by design. No subject to production testing.
DMN4031SSD
Document number: DS35410 Rev. 4 - 2
2 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMN4031SSD
30
25
30
25
I
D
, DRAIN CURRENT (A)
V
DS
= 5.0V
ADVANCE INFORMATION
I
D
, DRAIN CURRENT (A)
20
V
GS
= 10V
20
15
V
GS
= 4.5V
15
10
10
T
A
= 150
°
C
T
A
= 125
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= -55
°
C
5
V
GS
= 3.5V
V
GS
= 4.0V
5
0
0
0
0.5
1.0
1.5
V
DS
, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
2.0
1
2
3
4
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
5
R
DS(ON)
,DRAIN-SOURCE ON-RESISTANCE(
Ω
)
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
5
10
15
20
25
I
D
, DRAIN SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
30
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE(
Ω
)
0.10
0.06
0.05
V
GS
= 4.5V
0.04
T
A
= 150
°
C
T
A
= 125
°
C
T
A
= 85
°
C
0.03
0.02
T
A
= 25
°
C
T
A
= -55
°
C
0.01
0
0
5
10
15
20
25
I
D
, DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
30
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
1.6
0.06
0.05
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (Normalized)
1.4
0.04
1.2
0.03
V
GS
= 10V
I
D
= 10A
1.0
0.02
0.8
0.01
0
-50
V
GS
= 10V
I
D
= 5 A
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Fig. 5 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Fig. 6 On-Resistance Variation with Temperature
DMN4031SSD
Document number: DS35410 Rev. 4 - 2
3 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMN4031SSD
3.0
V
GS(TH)
, GATE THRESHOLD VOLTAGE(V)
2.5
20
16
I
S
, SOURCE CURRENT (A)
ADVANCE INFORMATION
2.0
12
1.5
8
1.0
0.5
0
-50
4
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
10,000
0
0
0.2
0.4
0.6
0.8
1.0
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
1,000
T
A
= 150°C
C
T
, JUNCTION CAPACITANCE (pF)
I
DSS
, LEAKAGE CURRENT (µA)
1,000
C
iss
100
T
A
= 125°C
100
C
oss
10
T
A
= 85°C
C
rss
f = 1MHz
T
A
= 25°C
10
0
5
10
15
20
25
30
35
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
40
10
20
30
V
DS
, DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
100
R
DS(on)
Limited
1
0
10
V
GS
, GATE-SOURCE VOLTAGE (V)
8
f = 1MHz
10
I
D
, DRAIN CURRENT (A)
DC
6
1
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
P
W
= 100µs
P
W
= 10µs
4
0.1
2
0.01
0
0
2
4
6
8 10 12 14 16 18 20
Q
g
, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
0.001
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
100
DMN4031SSD
Document number: DS35410 Rev. 4 - 2
4 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMN4031SSD
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
ADVANCE INFORMATION
E1 E
A1
L
Gauge Plane
Seating Plane
Detail ‘A’
h
A2 A A3
e
D
b
7
°~
9
°
45
°
Detail ‘A’
SO-8
Dim
Min
Max
A
-
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
-
0.35
L
0.62
0.82
0°
8°
θ
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
0.254
C1
C2
Y
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
DMN4031SSD
Document number: DS35410 Rev. 4 - 2
5 of 6
www.diodes.com
February 2014
© Diodes Incorporated
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