2N4060 datasheet, PDF - EEWORLD Datasheet

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2N4060: DescriptionNPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS; CategoryDiscrete semiconductor The transistor; File Size320KB，2 Pages; ManufacturerCentral Semiconductor

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2N4060 Overview

NPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS

2N4060 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	45
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.62 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

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2N4058 2N4061

2N4059 2N4062

2N4060

SILICON

PNP TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N4058 series

devices are silicon PNP transistors designed for

low level, low noise (2N4058), low level, high gain

(2N4059, 2N4060, 2N4061, 2N4062) applications.

Recommended NPN complementary series is 2N3707

thru 2N3711.

MARKING: FULL PART NUMBER

TO-92 CASE

MAXIMUM RATINGS:

(TA=25°C)

SYMBOL

VCBO

VCEO

VEBO

IC

PD

TJ, Tstg

UNITS

V

mA

mW

°C

Collector-Base Voltage

Emitter-Base Voltage

30

6.0

200

625

-65 to +150

Collector-Emitter Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

ELECTRICAL

SYMBOL

ICBO

IEBO

BVCEO

VCE(SAT)

VBE(ON)

NF

CHARACTERISTICS:

(TA=25°C unless otherwise noted)

TEST CONDITIONS

MIN

VCB=20V

VEB=6.0V

IC=1.0mA

IC=10mA, IB=0.5mA

VCE=5.0V, IC=1.0mA

VCE=5.0V, IC=100μA, RG=5.0KΩ,

BW=15.7kHz (2N4058 only)

2N4058

MIN MAX

100 400

-

100 550

-

2N4059

MIN MAX

-

45 660

-

45 800

30

MAX

100

0.7

UNITS

nA

V

dB

2N4061

MIN MAX

-

90 330

-

90 450

2N4062

MIN MAX

-

180 660

-

180 800

0.5

1.0

5.0

2N4060

MIN MAX

-

45 165

-

45 250

SYMBOL

hFE

hfe

TEST CONDITIONS

VCE=5.0V, IC=100μA

VCE=5.0V, IC=1.0mA

VCE=5.0V, IC=100μA, f=1.0kHz

VCE=5.0V, IC=1.0mA, f=1.0kHz

R1 (13-March 2014)

2N4060 Related Products

	2N4060	2N4058_15	2N4062	2N4059	2N4061
Description	NPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS	NPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS	NPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS	NPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS	NPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS
Is it Rohs certified?	incompatible	-	incompatible	incompatible	incompatible
Reach Compliance Code	_compli	-	_compli	_compli	_compli
ECCN code	EAR99	-	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.2 A	-	0.2 A	0.2 A	0.2 A
Collector-emitter maximum voltage	30 V	-	30 V	30 V	30 V
Configuration	SINGLE	-	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	45	-	180	45	90
JEDEC-95 code	TO-92	-	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	-	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
JESD-609 code	e0	-	e0	e0	e0
Number of components	1	-	1	1	1
Number of terminals	3	-	3	3	3
Maximum operating temperature	150 °C	-	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	-	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	-	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	-	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.62 W	-	0.36 W	0.62 W	0.62 W
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	-	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	-	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	-	100 MHz	100 MHz	100 MHz
Base Number Matches	1	-	1	1	1

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