DMN2013UFX
Dual N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
11.5mΩ @ V
GS
= 4.5V
20V
14mΩ @ V
GS
= 2.5V
9A
I
D
max
T
A
= +25°C
10 A
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: W-DFN5020-6
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.03 grams (approximate)
G1 S1 S1
Applications
General Purpose Interfacing Switch
Power Management Functions
W-DFN5020-6
D1/D2
ESD PROTECTED
Top View
G2 S2 S2
Bottom View
Top View
Pin-Out
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMN2013UFX-7
Notes:
Case
W-DFN5020-6
Packaging
3000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.htmlfor more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
FX = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
Feb
2
2011
Y
Mar
3
Apr
4
2012
Z
May
5
Jun
6
2013
A
Jul
7
2014
B
Aug
8
Sep
9
2015
C
Oct
O
Nov
N
2016
D
Dec
D
DMN2013UFX
Document number: DS36657 Rev. 2 - 2
1 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMN2013UFX
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
GS
= 4.5V
Continuous Drain Current (Note 5) V
GS
= 2.5V
Pulsed Drain Current (Note 7)
Steady
State
Steady
State
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
DM
Value
20
±8
10
8
9
7
80
Unit
V
V
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 6)
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
P
D
R
θJA
T
J
,
T
STG
Max
0.78
163
2.14
59
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
Min
20
—
—
0.5
Typ
—
—
—
—
8.4
8.5
8.6
9.0
9.6
18.2
—
2607
255
236
1.2
32.4
57.4
3.5
4.0
8.6
20.3
42.5
13.7
Max
—
1
±10
1.1
11.5
12.0
12.5
13.5
14.0
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
μA
μA
V
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 16V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 8.5A
V
GS
= 4.0V, I
D
= 8.5A
V
GS
= 3.5V, I
D
= 8.5A
V
GS
= 3.1V, I
D
= 8A
V
GS
= 2.5V, I
D
= 8A
V
DS
= 5V, I
D
= 4A
V
GS
= 0V, I
S
= 8.5A
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 10V, I
D
= 8.5A
Static Drain-Source On-Resistance
R
DS (ON)
—
mΩ
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
—
—
—
—
—
—
—
—
—
—
—
—
—
—
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
V
DS
= 10V, I
D
= 8.5A
V
GS
= 4.5V, R
G
= 1.8Ω
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMN2013UFX
Document number: DS36657 Rev. 2 - 2
2 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMN2013UFX
30.0
V
GS
= 8.0V
V
GS
= 4.5V
30
V
DS
= 5.0V
25.0
I
D
, DRAIN CURRENT (A)
25
I
D
, DRAIN CURRENT (A)
V
GS
= 2.5V
20.0
V
GS
= 2.0V
V
GS
= 1.5V
20
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
15.0
10.0
15
10
T
A
= 25°C
T
A
= -55°C
5.0
V
GS
= 1.2V
V
GS
= 1.1V
5
0.0
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
2
0
0
0.5
1
1.5
2
2.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.011
V
GS
= 2.5V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.012
0.03
0.025
0.01
0.02
I
D
= 8.5A
0.009
V
GS
= 3.5V
0.015
0.008
V
GS
= 4.5V
V
GS
= 4.0V
0.01
0.007
0.005
0.006
1
6
11
16
21
26
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
V
GS
= 4.5V
31
0
1
2
3
4
5
6
7
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
8
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.02
0.018
0.016
0.014
0.012
0.01
0.008
0.006
0.004
0.002
0
0
10
15
20
25
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
5
30
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
2
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.5
V
GS
= 4.5V
I
D
= 10A
V
GS
= 2.5V
I
D
= 5A
1
0.5
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
DMN2013UFX
Document number: DS36657 Rev. 2 - 2
3 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMN2013UFX
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
1.2
1.1
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-50
I
D
= 250µA
I
D
= 1mA
V
GS
= 4.5V
I
D
= 10A
V
GS
= 2.5V
I
D
= 5.0A
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with Temperature
30
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10000
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
25
I
S
, SOURCE CURRENT (A)
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
20
1000
15
C
oss
C
rss
10
100
5
0
f = 1MHz
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
V
DS
= 10V
I
D
= 8.5A
1.5
10
0
8
12
16
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
4
20
8
V
GS
GATE THRESHOLD VOLTAGE (V)
6
4
2
0
0
5
10 15 20 25 30 35 40 45 50 55 60
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
DMN2013UFX
Document number: DS36657 Rev. 2 - 2
4 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMN2013UFX
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
A1
e
D
A3
D2
Pin 1 ID
E
E2
W-DFN5020-6
Dim
Min
Max
Typ
A
0.75 0.85 0.80
A1
0
0.05 0.02
A3
0.15
b
0.20 0.30 0.25
D
1.90 2.10 2.00
D2
1.40 1.60 1.50
e
0.50
E
4.90 5.10 5.00
E2
2.80 3.00 2.90
L
0.35 0.65 0.50
Z
0.375
All Dimensions in mm
L
Z
b
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
X
X1
X2
C
Y2
Y3
G
Dimensions Value (in mm)
C
0.50
G
0.35
X
0.35
X1
0.90
X2
1.80
Y
0.70
Y2
1.60
Y3
3.20
DMN2013UFX
Document number: DS36657 Rev. 2 - 2
5 of 6
www.diodes.com
March 2014
© Diodes Incorporated
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