DMN2015UFDE
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
ADVANCE INFORMATION
V
(BR)DSS
R
DS(ON) max
11.6m @ V
GS
= 4.5V
20V
15mΩ @ V
GS
= 2.5V
Package
U-DFN2020-6
Type E
I
D max
T
A
= +25°C
10.5A
9.4A
Features
0.6mm profile – ideal for low profile applications
PCB footprint of 4mm
2
Low Gate Threshold Voltage
Low On-Resistance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: U-DFN2020-6 Type E
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.0065 grams (approximate)
Drain
Applications
General Purpose Interfacing Switch
Power Management Functions
U-DFN2020-6 Type E
Pin1
Gate
Source
Bottom View
Bottom View
Pin Out
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMN2015UFDE-7
DMN2015UFDE-13
Notes:
Marking
N4
N4
Reel size (inches)
7
13
Quantity per reel
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
N4
N4 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
Feb
2
2012
Z
Mar
3
Apr
4
2013
A
May
5
Jun
6
YM
2014
B
Jul
7
2015
C
Aug
8
Sep
9
2016
D
Oct
O
Nov
N
2017
E
Dec
D
DMN2015UFDE
D
atasheet number: DS35560 Rev. 9 - 2
1 of 6
www.diodes.com
December 2014
© Diodes Incorporated
DMN2015UFDE
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
t<10s
Steady
State
t<10s
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
DM
I
S
Value
20
±12
10.5
8.5
12.5
10.0
9.4
7.5
11.2
8.8
80
2.5
Units
V
V
A
A
A
A
A
A
ADVANCE INFORMATION
Continuous Drain Current (Note 6) V
GS
= 4.5V
Continuous Drain Current (Note 6) V
GS
= 2.5V
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T
A
= +25°C
T
A
= +70°C
Steady state
t<10s
T
A
= +25°C
T
A
= +70°C
Steady state
t<10s
Symbol
P
D
R
JA
P
D
R
JA
R
JC
T
J,
T
STG
Value
0.66
0.42
189
132
2.03
1.31
61
43
9.3
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
T
rr
Q
rr
Min
20
—
—
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
9.3
11.4
17
24
11.3
—
1779
175
154
0.94
19.7
45.6
2.9
3.8
7.4
16.8
43.6
10.9
8.6
3.7
Max
—
1
±100
1.1
11.6
15
30
50
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
A
nA
V
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 16V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 8.5A
V
GS
= 2.5V, I
D
= 8.5A
V
GS
= 1.8V, I
D
= 5A
V
GS
= 1.5V, I
D
= 3A
V
DS
= 10V, I
D
= 8.5A
V
GS
= 0V, I
S
= 8.5A
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 10V, I
D
= 8.5A
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
m
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
V
DS
= 10V, I
D
= 8.5A
V
GS
= 4.5V, R
G
= 1.8Ω
I
F
= 8.5A, di/dt = 210A/μs
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN2015UFDE
D
atasheet number: DS35560 Rev. 9 - 2
2 of 6
www.diodes.com
December 2014
© Diodes Incorporated
DMN2015UFDE
30
20
V
DS
= 5.0V
25
ADVANCE INFORMATION
16
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
20
12
15
8
T
A
= 150°C
10
5
4
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
0
0
1
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig.1 Typical Output Characteristic
3
0
0
T
A
= -55°C
0.5
1.0
1.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
2.0
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.05
0.050
0.045
0.040
0.035
0.030
0.025
0.020
0.015
I
D
= 8.5A
0.04
0.03
V
GS
= 1.5V
0.02
V
GS
= 1.8V
V
GS
= 2.5V
0.01
V
GS
= 4.5V
0.010
I
D
= 4.5A
0.005
0
0
2
4
6
8
10
12
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
0
0
4
8
12
16
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
20
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.020
V
GS
= 4.5V
1.6
V
GS
= 2.5V
I
D
= 5A
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.4
V
GS
= 4.5V
I
D
= 10A
0.015
T
A
= 150°C
T
A
= 125°C
1.2
0.010
T
A
= 85°C
T
A
= 25°C
1.0
0.005
T
A
= -55°C
0.8
0
0
8
12
16
I
D
, DRAIN CURRENT (A)
Fig. 5 Typical On-Resistance vs.
Drain Current and Temperature
4
20
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Fig. 6 On-Resistance Variation with Temperature
DMN2015UFDE
D
atasheet number: DS35560 Rev. 9 - 2
3 of 6
www.diodes.com
December 2014
© Diodes Incorporated
DMN2015UFDE
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.020
1.6
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
1.4
1.2
1.0
0.8
I
D
= 1mA
ADVANCE INFORMATION
0.015
V
GS
= 4.5 V
I
D
= 5A
0.010
V
GS
= 10V
I
D
= 10A
0.6
I
D
= 250µA
0.005
0.4
0.2
-25
0
25
50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
0
-50
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Fig. 7 On-Resistance Variation with Temperature
20
I
S
, SOURCE CURRENT (A)
16
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
1,000
12
T
A
= 25°C
C
oss
C
rss
8
4
f = 1MHz
0
0
0.2
0.4
0.6
0.8
1.0
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Diode Forward Voltage vs. Current
10
0
5
10
15
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Junction Capacitance
20
10
100
R
DS(on)
Limited
P
W
= 100µs
V
GS
GATE THRESHOLD VOLTAGE (V)
8
I
D
, DRAIN CURRENT (A)
10
6
V
DS
= 10V
I
D
= 8.5A
DC
1
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
4
0.1
T
J(max)
= 150°C
2
0
0
5
10 15 20 25 30 35 40 45 50
Q
g
, TOTAL GATE CHARGE (nC)
Fig. 11 Gate Charge
0.01
0.01
T
A
= 25°C
V
GS
= 12V
Single Pulse
DUT on 1 * MRP Board
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
100
DMN2015UFDE
D
atasheet number: DS35560 Rev. 9 - 2
4 of 6
www.diodes.com
December 2014
© Diodes Incorporated
DMN2015UFDE
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.9
D = 0.7
D = 0.5
D = 0.3
ADVANCE INFORMATION
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
R
JA
(t) = r(t) * R
JA
R
JA
= 61°C/W
Duty Cycle, D = t1/ t2
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Fig. 13 Transient Thermal Resistance
10
100
1,000
D = Single Pulse
0.001
0.00001
Package Outline Dimensions
A
A1
A3
U-DFN2020-6
Type E
Dim
Min
Max
Typ
A
0.57
0.63
0.60
A1
0
0.05
0.03
A3
—
—
0.15
b
0.25
0.35
0.30
b1
0.185 0.285 0.235
D
1.95
2.05
2.00
D2
0.85
1.05
0.95
E
1.95
2.05
2.00
E2
1.40
1.60
1.50
e
—
—
0.65
L
0.25
0.35
0.30
L1
0.82
0.92
0.87
K1
—
—
0.305
K2
—
—
0.225
Z
—
—
0.20
All Dimensions in mm
D
b1
D2
E E2
L1
K1
L(2X)
K2
Z(4X)
e
b(6X)
Suggested Pad Layout
Dimensions
X2
Y3 Y2
Y1
X1
C
X
X1
X2
Y
Y1
Y2
Y3
Value
(in mm)
0.650
0.400
0.285
1.050
0.500
0.920
1.600
2.300
X (6x)
C
Y (2x)
DMN2015UFDE
D
atasheet number: DS35560 Rev. 9 - 2
5 of 6
www.diodes.com
December 2014
© Diodes Incorporated
Microchip MCU
京公网安备 11010802033920号
EEWORLD
