A Product Line of
Diodes Incorporated
DMN2300UFB
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
175mΩ @ V
GS
= 4.5V
240mΩ @ V
GS
= 2.5V
360mΩ @ V
GS
= 1.8V
I
D
max
T
A
= +25°C
1.30A
1.11A
0.91A
Features and Benefits
Footprint of just 0.6mm
2
– thirteen times smaller than SOT23
0.5mm profile – ideal for low profile applications
On resistance <200mΩ @ V
GS
= 4.5V
Low Gate Threshold Voltage
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
ESD Protected Gate 2KV
Qualified to AEC-Q101 Standards for High Reliability
20V
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Load Switch
Mechanical Data
Case: X1-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe; Solderable
per MIL-STD-202, Method 208
e4
Weight: 0.001 grams (Approximate)
Drain
X1-DFN1006-3
Body
Diode
S
D
G
ESD PROTECTED TO 2kV
Gate
Bottom View
Top View
Internal Schematic
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMN2300UFB-7
DMN2300UFB-7B
Notes:
Marking
NI
NI
Reel size (inches)
7
7
Tape width (mm)
8
8
Quantity per reel
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
DMN2300UFB
Document number: DS35235 Rev. 2 - 2
1 of 8
www.diodes.com
June 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN2300UFB
Marking Information
NI
Top View
Dot Denotes Drain Side
From date code 1527 (YYWW),
this changes to:
NI
Top View
Bar Denotes Gate and Source Side
DMN2300UFB-7
NI
NI
NI
Top View
Bar Denotes Gate and Source Side
NI = Part Marking Code
DMN2300UFB-7B
NI
NI
DMN2300UFB
Document number: DS35235 Rev. 2 - 2
NI
2 of 8
www.diodes.com
NI
NI
NI
NI
June 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN2300UFB
Maximum Ratings
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 7)
Steady
State
T
A
= +25°C (Note 5)
T
A
= +85°C (Note 5)
T
A
= +25°C (Note 6)
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
20
±8
1.32
0.94
1.78
8
Unit
V
V
A
A
Thermal Characteristics
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
P
D
P
D
R
θJA
R
θJA
T
J
,
T
STG
Value
0.468
1.2
267
104
-55 to +150
Unit
W
W
°C/W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
20
-
-
0.45
-
-
-
40
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
0.7
67.62
9.74
7.58
68.51
0.89
0.14
0.16
4.92
6.93
21.71
10.62
Max
-
1
10
0.95
175
240
360
-
1.2
-
-
-
-
-
-
-
-
-
-
-
Unit
V
µA
µA
V
mΩ
mS
V
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 10μA
V
DS
= 20V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 300mA
V
GS
= 2.5V, I
D
= 250mA
V
GS
= 1.8V, I
D
= 100mA
V
DS
= 3V, I
D
= 30mA
V
GS
= 0V, I
S
= 300mA
V
DS
= 20V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 1A
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
V
DS
= 10V, I
D
= 1A
V
GS
= 4.5V, R
G
= 6Ω
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 25mm X 25mm square copper plate.
7.
Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%.
8. Short duration pulse test used to minimize self-heating effect.
DMN2300UFB
Document number: DS35235 Rev. 2 - 2
3 of 8
www.diodes.com
June 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN2300UFB
2.0
V
GS
= 4.5V
V
GS
= 2.5V
V
GS
= 2.0V
2.0
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
V
GS
= 1.5V
I
D
, DRAIN CURRENT (A)
1.5
V
GS
= 1.8V
1.5
1.0
1.0
0.5
V
GS
= 1.2V
0.5
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
5
0
0
0.5
1
1.5
2
2.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.4
0.8
V
GS
= 4.5V
0.3
0.6
0.2
V
GS
= 2.5V
V
GS
= 4.5V
0.4
T
A
= 125°C
T
A
= 150°C
0.1
0.2
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0
0
0
0.25
0.5 0.75 1
1.25 1.5 1.75
I
D
, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
2
0
0.4
0.8
1.2
1.6
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
2
1.4
V
GS
= 4.5V
I
D
= 1.0A
V
GS
= 2.5V
I
D
= 500mA
R
DSON
, DRAIN-SOURCE ON-RESISTANCE (
)
1.6
0.8
R
DSON
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.6
1.2
0.4
V
GS
= 2.5V
I
D
= 500mA
1.0
0.2
V
GS
= 4.5V
I
D
= 1.0A
0.8
0.6
-50
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
-25
0
-50
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
DMN2300UFB
Document number: DS35235 Rev. 2 - 2
4 of 8
www.diodes.com
June 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN2300UFB
1.2
2.0
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
1.0
I
S
, SOURCE CURRENT (A)
1.6
I
D
= 1mA
0.8
1.2
T
A
= 25°C
0.6
I
D
= 250µA
0.8
0.4
0.2
0.4
0
-50 -25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
1,000
T
A
= 125°C
0
0
0.2
0.4
0.6
0.8
1.0
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
100,000
I
DSS
, LEAKAGE CURRENT (nA)
I
GSS
, LEAKAGE CURRENT (nA)
10,000
T
A
= 150°C
T
A
= 125°C
100
1,000
T
A
= 85°C
T
A
= 85°C
100
T
A
= 25°C
10
T
A
= 25°C
T
A
= -55°C
T
A
= -55°C
10
1
2
4
6
8
10 12 14 16 18
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Leakage Current
vs. Drain-Source Voltage
20
1
2
6
8
10
12
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig.10 Leakage Current vs. Gate-Source Voltage
4
8
V
GS
, GATE-SOURCE VOLTAGE (V)
6
V
DS
= 15V
I
D
= 1A
4
2
0
0
0.5
1
1.5
2
2.5
Q
g
, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
3
DMN2300UFB
Document number: DS35235 Rev. 2 - 2
5 of 8
www.diodes.com
June 2015
© Diodes Incorporated
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