DMN2400UFB4-7B datasheet, PDF - EEWORLD Datasheet

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DMN2400UFB4-7B: Description750 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET; Categorysemiconductor Discrete semiconductor; File Size316KB，7 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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DMN2400UFB4-7B Overview

750 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

DMN2400UFB4-7B Parametric

Parameter Name	Attribute value
Number of terminals	3
Minimum breakdown voltage	20 V
Processing package description	GREEN, ULTRA SMALL, PLASTIC, DFN1006H4-3, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	Rectangle
Package Size	ChipCARRIER
surface mount	Yes
Terminal form	NO
terminal coating	Nickel Palladium
Terminal location	BOTTOM
Packaging Materials	Plastic/Epoxy
structure	Single WITH BUILT-IN diode
Shell connection	DRAIN
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Channel type	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	Universal small signal
Maximum leakage current	0.7500 A
Maximum drain on-resistance	0.5500 ohm

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DMN2400UFB4

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features



Low On-Resistance

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

UItra-Small Surface Mount Package

Ultra-Low Package Profile, 0.4mm Maximum Package Height

ESD Protected up to 1.5kV

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 standards for High Reliability

Mechanical Data



Case: X2-DFN1006-3

Case Material: Molded Plastic, "Green" Molding Compound;

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish



NiPdAu over Copper Leadframe; Solderable

per MIL-STD-202, Method 208

Weight: 0.001 grams (Approximate)

D r a in

X2-DFN1006-3

ESD PROTECTED TO 1.5kV

G a te

BOTTOM VIEW

TOP VIEW

Package Pin Configuration

G a te

P ro te c tio n

D io d e

S o u rce

E Q U IV A L E N T C IR C U I T

Ordering Information

(Note 4)

Part Number

DMN2400UFB4-7

DMN2400UFB4-7B

Notes:

Marking

Reel size (inches)

Tape width (mm)

Quantity per reel

3,000

10,000

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

DMN2400UFB4

Document number: DS32025 Rev. 6 - 2

1 of 7

www.diodes.com

May 2015

DMN2400UFB4-7B Related Products

	DMN2400UFB4-7B	DMN2400UFB4_15
Description	750 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	750 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Number of terminals	3	3
Minimum breakdown voltage	20 V	20 V
Processing package description	GREEN, ULTRA SMALL, PLASTIC, DFN1006H4-3, 3 PIN	GREEN, ULTRA SMALL, PLASTIC, DFN1006H4-3, 3 PIN
Lead-free	Yes	Yes
EU RoHS regulations	Yes	Yes
state	ACTIVE	ACTIVE
packaging shape	Rectangle	Rectangle
Package Size	ChipCARRIER	ChipCARRIER
surface mount	Yes	Yes
Terminal form	NO	NO
terminal coating	Nickel Palladium	Nickel Palladium
Terminal location	BOTTOM	BOTTOM
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy
structure	Single WITH BUILT-IN diode	Single WITH BUILT-IN diode
Shell connection	DRAIN	DRAIN
Number of components	1	1
transistor applications	switch	switch
Transistor component materials	silicon	silicon
Channel type	N channel	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	ENHANCEMENT
Transistor type	Universal small signal	Universal small signal
Maximum leakage current	0.7500 A	0.7500 A
Maximum drain on-resistance	0.5500 ohm	0.5500 ohm

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