DMN2400UFB4
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
UItra-Small Surface Mount Package
Ultra-Low Package Profile, 0.4mm Maximum Package Height
ESD Protected up to 1.5kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: X2-DFN1006-3
Case Material: Molded Plastic, "Green" Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
NiPdAu over Copper Leadframe; Solderable
per MIL-STD-202, Method 208
e4
Weight: 0.001 grams (Approximate)
D r a in
X2-DFN1006-3
S
D
G
ESD PROTECTED TO 1.5kV
G a te
BOTTOM VIEW
TOP VIEW
Package Pin Configuration
G a te
P ro te c tio n
D io d e
S o u rce
E Q U IV A L E N T C IR C U I T
Ordering Information
(Note 4)
Part Number
DMN2400UFB4-7
DMN2400UFB4-7B
Notes:
Marking
NC
NC
Reel size (inches)
7
7
Tape width (mm)
8
8
Quantity per reel
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
DMN2400UFB4
Document number: DS32025 Rev. 6 - 2
1 of 7
www.diodes.com
May 2015
© Diodes Incorporated
DMN2400UFB4
Marking Information
NC
Top View
Dot Denotes Drain Side
From date code 1527 (YYWW),
this changes to:
NC
Top View
Bar Denotes Gate and Source Side
DMN2400UFB4-7
NC
NC
NC
Top View
Bar Denotes Gate and Source Side
NC = Part Marking Code
DMN2400UFB4-7B
NC
NC
Maximum Ratings
@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
GS
= 4.5V
Pulsed Drain Current (Notes 5 & 6)
Steady
State
T
A
= +25°C
T
A
= +85°C
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
20
±12
0.75
0.55
3
Units
V
V
A
A
Thermal Characteristics
@T
A
= +25°C, unless otherwise specified.)
Symbol
P
D
R
θJA
T
J,
T
STG
Value
0.47
258
-55 to +150
Units
mW
°C/W
°C
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided.
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
DMN2400UFB4
Document number: DS32025 Rev. 6 - 2
2 of 7
www.diodes.com
NC
NC
NC
NC
NC
May 2015
© Diodes Incorporated
DMN2400UFB4
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
I
GSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
20
—
—
—
—
0.5
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
1.0
0.7
36.0
5.7
4.2
0.5
0.07
0.1
4.11
3.82
14.8
9.6
Max
—
100
50
±100
±1.0
±50
0.9
0.55
0.75
0.9
—
1.2
—
—
—
—
—
—
—
—
—
—
Unit
V
nA
nA
μA
μA
V
Ω
S
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 20V, V
GS
= 0V
V
DS
= 5V, V
GS
= 0V
V
GS
= ±3V, V
DS
= 0V
V
GS
= ±4.5V, V
DS
= 0V
V
GS
= ±10V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 600mA
V
GS
= 2.5V, I
D
= 500mA
V
GS
= 1.8V, I
D
= 350mA
V
DS
= 10V, I
D
= 400mA
V
GS
= 0V, I
S
= 150mA
V
DS
=16V, V
GS
= 0V,
f = 1.0MHz
V
GS
= 4.5V, V
DS
= 10V,
ID = 250mA
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
Gate-Source Leakage
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
—
—
—
—
—
—
—
—
—
—
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 47Ω, R
G
= 10Ω,
I
D
= 200mA
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2.0
V
GS
= 4.5V
V
GS
= 2.5V
1.5
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
V
GS
= 2.0V
I
D
, DRAIN CURRENT (A)
1.5
1.0
1.0
V
GS
= 1.8V
0.5
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0.5
V
GS
= 1.5V
0
V
GS
= 1.2V
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
5
0
0
0.5
1
1.5
2
2.5
V
GS
, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
3
DMN2400UFB4
Document number: DS32025 Rev. 6 - 2
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May 2015
© Diodes Incorporated
DMN2400UFB4
0.8
0.8
V
GS
= 4.5V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.6
V
GS
= 1.8V
0.6
T
A
= 150°C
0.4
V
GS
= 2.5V
0.4
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
V
GS
= 4.5V
0.2
0.2
T
A
= -55°C
0
0
0.4
0.8
1.2
1.6
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
2
0
0
0.50
0.75
1.00
1.25 1.50
I
D
, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
0.25
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
V
GS
= 4.5V
I
D
= 1.0A
1.4
V
GS
= 2.5.V
I
D
= 500mA
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
1.6
0.8
0.6
1.2
0.4
V
GS
= 2.5V
I
D
= 500mA
1.0
0.2
0.8
V
GS
= 4.5V
I
D
= 1.0A
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
1.2
2.0
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
1.0
I
S
, SOURCE CURRENT (A)
1.6
T
A
= 25°C
0.8
I
D
= 1mA
1.2
0.6
I
D
= 250µA
0.8
0.4
0.2
0.4
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
-50
-25
0
0
0.2
0.4
0.6
0.8
1.0
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
DMN2400UFB4
Document number: DS32025 Rev. 6 - 2
4 of 7
www.diodes.com
May 2015
© Diodes Incorporated
DMN2400UFB4
I
DSS
, DRAIN-SOURCE LEAKAGE CURRENT (nA)
60
1,000
T
A
= 150°C
50
f = 1MHz
C, CAPACITANCE (pF)
40
C
iss
100
T
A
= 125°C
30
T
A
= 85°C
20
10
T
A
= -55°C
T
A
= 25°C
10
0
0
C
oss
C
rss
1
5
10
15
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Capacitance
20
2
6
8
10 12 14 16 18 20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
4
I
GSS
, GATE-SOURCE LEAKAGE CURRENT (nA)
I
GSS
, GATE-SOURCE LEAKAGE CURRENT (nA)
100,000
100,000
10,000
T
A
= 150°C
T
A
= 125°C
10,000
T
A
= 150°C
1,000
T
A
= 85°C
1,000
T
A
= 85°C
T
A
= 125°C
100
T
A
= 25°C
T
A
= -55°C
100
T
A
= 25°C
10
10
T
A
= -55°C
1
1
2
6
8
10
12
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 11 Typical Gate-Source Leakage Current
vs. Gate-Source Voltage
1
4
2
6
8
10
12
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 12 Typical Gate-Source Leakage Current
vs. Gate-Source Voltage
4
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
R
JA
(t) = r(t) * R
JA
R
JA
= 253°C/W
P(pk)
D = 0.02
0.01
D = 0.01
t
1
D = 0.005
D = Single Pulse
t
2
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/t
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, PULSE DURATION TIME (s)
Fig. 13 Transient Thermal Response
10
100
1,000
DMN2400UFB4
Document number: DS32025 Rev. 6 - 2
5 of 7
www.diodes.com
May 2015
© Diodes Incorporated
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