NOT RECOMMENDED FOR NEW DESIGN
USE
DMN2450UFB4
DMN2500UFB4
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
R
DS(ON) Max
0.4Ω @ V
GS
= 4.5V
20V
0.7Ω @ V
GS
= 1.8V
0.8A
I
D
T
A
= +25°
C
1A
Features and Benefits
Low On-Resistance
Very Low Gate Threshold Voltage V
GS(TH)
, 1.0V Max.
Low Input Capacitance
Fast Switching Speed
Ultra-Small Surfaced Mount Package
Ultra-Low Package Profile, 0.4mm Maximum Package Height
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
ADVANCE INFORMATION
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
DC-DC Converters
Power Management Functions
Mechanical Data
Case: X2-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper Leadframe; Solderable
per MIL-STD-202, Method 208
e4
Weight: 0.001 grams (Approximate)
X2-DFN1006-3
S
D
G
ESD PROTECTED
Bottom View
Top View
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMN2500UFB4-7
DMN2500UFB4-7B
Notes:
Case
X2-DFN1006-3
X2-DFN1006-3
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
DMN2500UFB4
Document number: DS35724 Rev. 6 - 3
1 of 7
www.diodes.com
March 2018
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN
USE
DMN2450UFB4
DMN2500UFB4
Marking Information
NT
ADVANCE INFORMATION
Top View
Dot Denotes Drain Side
From date code 1527 (YYWW),
this changes to:
NT
Top View
Bar Denotes Gate and Source Side
DMN2500UFB4-7
NT
NT
NT
Top View
Bar Denotes Gate and Source Side
NT = Part Marking Code
DMN2500UFB4-7B
NT
NT
DMN2500UFB4
Document number: DS35724 Rev. 6 - 3
2 of 7
www.diodes.com
NT
NT
NT
NT
NT
March 2018
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN
USE
DMN2450UFB4
DMN2500UFB4
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
t<10s
Steady
State
t<10s
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Maximum Body Diode Continuous Current
T
A
= +25°
C
T
A
= +70°
C
T
A
= +25°
C
T
A
= +70°
C
T
A
= +25°
C
T
A
= +70°
C
T
A
= +25°
C
T
A
= +70°
C
Symbol
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
DM
I
S
Value
20
±6
810
640
950
750
1000
800
1200
1000
4
850
Unit
V
V
mA
mA
mA
mA
A
mA
ADVANCE INFORMATION
Continuous Drain Current (Note 5) V
GS
= 4.5V
Continuous Drain Current (Note 6) V
GS
= 4.5V
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
T
A
= +25°
C
T
A
= +70°
C
Steady State
t<10s
T
A
= +25°
C
T
A
= +70°
C
Steady State
t<10s
Symbol
P
D
R
JA
P
D
R
JA
T
J,
T
STG
Value
0.46
0.29
279
210
0.95
0.6
134
100
-55 to +150
Unit
W
°
C/W
°
C/W
W
°
C/W
°
C/W
°
C
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
Min
20
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
0.3
0.4
0.5
1.4
0.7
60.67
9.68
5.37
93
736.6
93.6
116.6
5.1
7.4
26.7
12.3
Max
-
100
±1.0
1.0
0.4
0.5
0.7
-
1.2
-
-
-
-
-
-
-
-
-
-
-
Unit
V
nA
µA
V
Ω
S
V
pF
pF
pF
Ω
pC
pC
pC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 20V, V
GS
= 0V
V
GS
= ±4.5V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 600mA
V
GS
= 2.5V, I
D
= 500mA
V
GS
= 1.8V, I
D
= 350mA
V
DS
= 10V, I
D
= 400mA
V
GS
= 0V, I
S
= 150mA
V
DS
=16V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 47Ω, R
G
= 10Ω,
I
D
= 200mA
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°
C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN2500UFB4
Document number: DS35724 Rev. 6 - 3
3 of 7
www.diodes.com
March 2018
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN
USE
DMN2450UFB4
DMN2500UFB4
1.5
V
GS
= 8.0V
V
GS
= 4.5V
1.5
1.2
I
D
, DRAIN CURRENT (A)
V
GS
= 3.0V
V
GS
= 2.5V
1.2
)
A
(
T
N
E 0.9
R
R
U
C
N
I
A 0.6
R
D
,
D
I
0.3
I
D
, DRAIN CURRENT (A)
V
DS
= 5V
ADVANCE INFORMATION
0.9
V
GS
= 2.0V
0.6
V
GS
= 1.5V
T
A
= 150°
C
T
A
= 125°
C
T
A
= 85°
C
T
A
= 25°
C
T
A
= -55°
C
0.3
0
0
V
GS
= 1.2V
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
5
0
0
0.5
1
1.5
2
2.5
V
GS
, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ()
)
(
E
C
N
A
T
S
I
S
E
R
-
N
O
E
C
R
U
O
S
-
N
I
A
R
D
,
)
N
R
0.6
V
GS
= 4.5V
T
A
= 150°
C
3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.8
0.7
0.6
0.5
V
GS
= 1.8V
0.5
0.4
T
A
= 125°
C
T
A
= 85°
C
0.4
0.3
0.2
0.1
0
0
0.3
0.6
0.9
1.2
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.5
V
GS
= 2.5V
V
GS
= 4.5V
0.3
T
A
= 25°
C
0.2
T
A
= -55°
C
0.1
0
0
0.6
0.9
1.2
1.5
I
D
, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
0.3
O
(
S
D
1.5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
1.7
0.8
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.6
1.3
V
GS
= 2.5V
I
D
= 500mA
V
GS
= 4.5V
I
D
= 1.0A
1.1
0.4
V
GS
= 2.5V
I
D
= 500mA
0.9
0.2
V
GS
= 4.5V
I
D
= 1.0A
0.7
0.5
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (癈 )
(°
C)
Fig. 5 On-Resistance Variation with Temperature
0
-50
-25
0
25
50
75 100 125 150
C)
T
J
, JUNCTION TEMPERATURE
(°
)
(癈
Fig. 6 On-Resistance Variation with Temperature
DMN2500UFB4
Document number: DS35724 Rev. 6 - 3
4 of 7
www.diodes.com
March 2018
© Diodes Incorporated
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
1.6
)
V
(
E
G
A
T
L 1.2
O
V
D
L
O
H
S
E 0.8
R
H
T
E
T
A
G
0.4
,
)
H
V
T
(
S
G
NOT RECOMMENDED FOR NEW DESIGN
USE
DMN2450UFB4
DMN2500UFB4
10
ADVANCE INFORMATION
I
D
= 250µA
8
)
A
(
T
N
E
R 6
R
U
C
E
C
R 4
U
O
S
,
S
I
2
I
S
, SOURCE CURRENT (A)
T
A
= 25°
C
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°
C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
I
DSS
, DRAIN-SOURCE LEAKAGE CURRENT (nA)
100
C
iss
0
-50
0
0.2
0.4
0.6
0.8
1.0
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
10
C
oss
C
rss
1
0
5
10
15
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Capacitance
20
) 1,000
A
n
(
T
N
E
R
R
U
C
100
E
G
A
K
A
E
L
E
C
R
U
10
O
S
-
N
I
A
R
D
,
S
S
D
1
I
T
A
= 150°
C
C, CAPACITANCE (pF)
T
A
= 125°
C
T
A
= 85°
C
T
A
= 25°
C
0
8
12
16
20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
4
DMN2500UFB4
Document number: DS35724 Rev. 6 - 3
5 of 7
www.diodes.com
March 2018
© Diodes Incorporated
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