DMN10H100SK3
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
100V
R
DS(ON) max
80mΩ @ V
GS
= 10V
100mΩ @ V
GS
= 4.5V
I
D
T
C
= +25°C
18A
16A
Features
Low R
DS(ON)
– ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
NEW PRODUCT
NEW PRODUCT
Description
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: TO252
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
Applications
Power Management Functions
DC-DC Converters
D
TO252
D
G
Top View
S
Internal Schematic
Top View
Pin Out
Ordering Information
(Note 4)
Part Number
DMN10H100SK3-13
Notes:
Case
TO252
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
TO252
N100SK
YYWW
=Manufacturer’s Marking
N100SK= Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 14 = 2014)
WW = Week Code (01 to 53)
DMN10H100SK3
Document number: DS37858 Rev. 2 - 2
1 of 7
www.diodes.com
April 2015
© Diodes Incorporated
DMN10H100SK3
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) V
GS
= 10V
T
C
= +25°C
T
C
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
DM
I
AS
E
AS
Value
100
±20
18
14
16
8
32.6
Units
V
V
A
A
A
mJ
NEW PRODUCT
NEW PRODUCT
Pulsed Drain Current (380μs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 1mH (Note 7)
Avalanche Energy, L = 1mH (Note 7)
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T
C
= +25°C
T
C
= +70°C
Symbol
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
37
24
46
3.3
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 10V)
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
rr
Min
100
1.0
Typ
2.0
65
70
0.77
1172
40.8
31.3
1.6
25.2
12.2
5.3
5.9
5.4
5.9
20
7.3
19.7
15.9
Max
1
±100
3.0
80
100
Unit
V
µA
nA
V
mΩ
V
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 80V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 3.3A
V
GS
= 4.5V, I
D
= 2A
V
GS
= 0V, I
S
= 3.2A
pF
Ω
V
DS
= 50V, V
GS
= 0V, f = 1MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
nC
V
DS
= 50V, I
D
= 3.3A
ns
V
DD
= 50V, R
G
= 6.0Ω, I
D
= 3.3A
ns
nC
I
F
= 3.3A, dI/dt = 100A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
6. Device mounted on infinite heatsink.
7. Guaranteed by design. Not subject to product testing.
8. Short duration pulse test used to minimize self-heating effect.
DMN10H100SK3
Document number: DS37858 Rev. 2 - 2
2 of 7
www.diodes.com
April 2015
© Diodes Incorporated
DMN10H100SK3
20.0
V
GS
=5.0V
10
V
DS
=10.0V
9
8
I
D
, DRAIN CURRENT (A)
V
GS
=4.5V
I
D
, DRAIN CURRENT (A)
16.0
V
GS
=6.0V
V
GS
=8.0V
7
6
5
4
3
2
150℃
125℃
85℃
25℃
12.0
V
GS
=10.0V
NEW PRODUCT
NEW PRODUCT
8.0
V
GS
=4.0V
4.0
V
GS
=3.5V
1
-55℃
0.0
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
0.1
0
1
2
3
4
5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
V
GS
=6.0V
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (Ω)
0.08
0.4
0.06
V
GS
=10V
0.3
0.04
0.2
I
D
=3.3A
0.02
0.1
I
D
=3.0A
0
0
2
4
6
8
10
12
14
16
18
20
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs Drain Current and
Gate Voltage
0
2
4
6
8
10
12
14
16
18
20
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
V
GS
=10V
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0
1
2
3
4
5
6
7
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
0.16
150℃
125℃
3
2.5
2
V
GS
=10V, I
D
=5A
85℃
1.5
V
GS
=5V, I
D
=1.0A
25℃
1
0.5
0
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
-55℃
8
9
10
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs Drain Current and
Temperature
DMN10H100SK3
Document number: DS37858 Rev. 2 - 2
3 of 7
www.diodes.com
April 2015
© Diodes Incorporated
DMN10H100SK3
0.15
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
2.5
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (Ω)
0.12
V
GS
=5V, I
D
=1.0A
2.2
I
D
=1mA
0.09
1.9
NEW PRODUCT
NEW PRODUCT
0.06
V
GS
=10V, I
D
=5A
1.6
I
D
=250μA
0.03
1.3
0
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
10
C
T
, JUNCTION CAPACITANCE (pF)
9
I
S
, SOURCE CURRENT (A)
8
7
6
5
4
3
2
1
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs Current
10
T
A
=-55℃
T
A
=150℃
T
A
=25℃
T
A
=125℃
T
A
=85℃
V
GS
=0V
1
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs Temperature
10000
f=1MHz
C
iss
1000
100
C
oss
C
rss
10
0
5
10
15
20
25
30
35
40
45
50
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
100
R
DS(ON)
Limited
P
W
=1μs
P
W
=10μs
I
D
, DRAIN CURRENT (A)
8
10
P
W
=100μs
V
GS
(V)
6
V
DS
=50V, I
D
=3.3A
P
W
=1ms
1
P
W
=10ms
P
W
=100ms
4
2
0.1
T
J(MAX)
=150℃
T
C
=25℃
Single Pulse
DUT on infinite heatsink
V
GS
=10V
P
W
=1s
0
0
5
10
15
20
25
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11. Gate Charge
4 of 7
www.diodes.com
0.01
0.1
1
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
DMN10H100SK3
Document number: DS37858 Rev. 2 - 2
April 2015
© Diodes Incorporated
DMN10H100SK3
1
r(t), TRANSIENT THERMAL RESISTANCE
D=0.9
D=0.7
D=0.5
D=0.3
NEW PRODUCT
NEW PRODUCT
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse
R
θJC
(t)=r(t) * R
θJC
R
θJC
=3.3℃/W
Duty Cycle, D=t1/ t2
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
DMN10H100SK3
Document number: DS37858 Rev. 2 - 2
5 of 7
www.diodes.com
April 2015
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
