DMN10H170SVT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
100V
R
DS(ON)
max
160mΩ @ V
GS
= 10V
200mΩ @ V
GS
= 4.5V
I
D
max
T
A
= +25°C
2.6A
2.3A
Features and Benefits
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
INFORMATION
ADVANCED NEW PRODUCT
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.015 grams (Approximate)
Applications
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
TSOT26
D
D
G
1
2
3
6
5
4
D
D
D
G
S
Top View
Top View
Pin-Out
S
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMN10H170SVT-7
DMN10H170SVT-13
Notes:
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
TSOT26
Date Code Key
Year
Code
Month
Code
2014
B
Jan
1
Feb
2
2015
C
Mar
3
YM
11N
11N = Product Type Marking Code
YM = Date Code Marking
Y or = Year (ex: B = 2014)
M = Month (ex: 9 = September)
2016
D
Apr
4
May
5
2017
E
Jun
6
2018
F
Jul
7
Aug
8
2019
G
Sep
9
2020
H
Oct
O
Nov
N
2021
I
Dec
D
DMN10H170SVT
Document number: DS37196 Rev. 2 - 2
1 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMN10H170SVT
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
Value
100
±20
2.6
2.1
11.2
2.0
Units
V
V
A
A
A
INFORMATION
ADVANCED NEW PRODUCT
Continuous Drain Current (Note 6) V
GS
= 10V
Pulsed Drain Current (10μs pulse, duty cycle
≦1%)
Maximum Body Diode Continuous Current (Note 6)
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 6)
Symbol
P
D
R
JA
R
JC
T
J,
T
STG
Value
1.2
1.7
101
73
15
-55 to +150
°C
Units
W
°C/W
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Min
100
1.0
Typ
2.0
115
124
0.9
1,167
36
25
1.3
4.9
9.7
2.0
2.0
10
11
42
12
30
35
Max
1.0
±100
3.0
160
200
1.0
nS
V
DD
= 50V, V
GS
= 10V,
R
G
= 25Ω, I
D
= 12.8A
nC
V
DS
= 80V, I
D
= 12.8A
Ω
pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
Unit
V
µA
nA
V
mΩ
V
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 100V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 5.0A
V
GS
= 4.5V, I
D
= 5.0A
V
GS
= 0V, I
S
= 10A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
nS
nC
V
GS
= 0V, I
S
=12.8A, di/dt=100A/µs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN10H170SVT
Document number: DS37196 Rev. 2 - 2
2 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMN10H170SVT
10
10
V
DS
= 5.0V
8
V
GS
= 10V
V
GS
= 7.0V
V
GS
= 8.0V
8
I
D
, DRAIN CURRENT (A)
6
I
D
, DRAIN CURRENT (A)
T
A
= 150°C
V
GS
= 9.0V
V
GS
= 6.0V
6
T
A
= 125°C
T
A
= 85°C
INFORMATION
ADVANCED NEW PRODUCT
4
V
GS
= 5.0V
V
GS
= 4.5V
4
T
A
= 25°C
2
V
GS
= 4.0V
V
GS
= 3.5V
2
T
A
= -55°C
0
0
V
GS
= 3.0V
0.5
1
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
V
GS
= 1.8V
2
0
0
1
2
3
4
5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
Vgs= 4.5V
6
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ( Ω)
0.18
0.16
0.14
0.12
0.1
V
GS
= 4.5V
V
GS
= 2.5V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.2
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0
4
6
8
Id, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain-Source and Temperature
V
GS
= 10V
I
D
= 150°C
I
D
= 125°C
I
D
= 85°C
0.08
0.06
0.04
0.02
0
1
2
3
4
5
6
7
8
9
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
10
I
D
= 25°C
I
D
= -55°C
2
10
2.8
V
GS
= 10V
0.3
I
D
= 10A
R
D S(ON )
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
2.4
I
D
= 10A
0.25
R
D S(ON )
, DRAIN-SOURCE
ON-RESISTANCE ( Ω)
2
V
GS
= 5V
0.2
V
GS
= 5V
1.6
I
D
= 5A
0.15
I
D
= 10A
1.2
0.1
0.8
0.4
-50
0.05
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE ( C)
Figure 5 On-Resistance Variation with Temperature
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
DMN10H170SVT
Document number: DS37196 Rev. 2 - 2
3 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMN10H170SVT
3
V
GS(TH)
, GATE THRESHOLD VOLTAG E (V)
10
9
2.5
I
D
= 250µA
8
I
S
, SOURCE CURRENT (A)
2
7
6
5
T
A
= 25
C
INFORMATION
ADVANCED NEW PRODUCT
1.5
4
3
2
1
1
0.5
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
0
0
0.2
0.4
0.6
0.8
1
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
1.2
10000
f = 1MHz
10
9
-V
GS
, GATE-SOURCE VOLTAGE (V)
C
T
, JUNCTIO N CAPACITANCE (pF)
C
iss
8
7
6
5
4
3
2
1
V
DS
= 80V
I
D
= 12.8A
1000
100
C
oss
C
rss
10
1
0
10
20
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
40
0
0
2
4
6
8
Q
g
, TOTAL GATE CHARGE (nC)
Figure 10 Gate-Charge Characteristics
10
100
R
DS(on)
Limited
10
I
D
, DRAIN CURRENT (A)
1
DC
P
W
= 10s
P
W
= 1s
0.1
P
W
= 100ms
T
J(m ax)
= 150°C
P
W
= 10ms
P
W
= 1ms
P
W
= 100µs
0.01
T
A
= 25°C
V
GS
= 10V
Single Pulse
DUT on 1 * MRP Board
0.001
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
1000
DMN10H170SVT
Document number: DS37196 Rev. 2 - 2
4 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMN10H170SVT
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
r(t), TRANSIENT THERMAL RESISTANCE
INFORMATION
ADVANCED NEW PRODUCT
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Rthja(t) = r(t) * Rthja
Rthja = 101°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
10
100
1000
Single Pulse
0.001
0.00001
0.0001
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
D
e1
E1
E
c
4x
1
6x b
L
L2
e
A
A2
A1
TSOT26
Dim Min Max Typ
A
1.00
A1
0.01 0.10
A2
0.84 0.90
D
2.90
E
2.80
E1
1.60
b
0.30 0.45
c
0.12 0.20
e
0.95
e1
1.90
L
0.30 0.50
L2
0.25
θ
0°
8°
4°
θ1
4°
12°
All Dimensions in mm
DMN10H170SVT
Document number: DS37196 Rev. 2 - 2
5 of 6
www.diodes.com
February 2015
© Diodes Incorporated
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