DMC1029UFDB
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
V
(BR)DSS
R
DS(ON) max
29mΩ @ V
GS
= 4.5V
34mΩ @ V
GS
= 2.5V
44mΩ @ V
GS
= 1.8V
65mΩ @ V
GS
= 1.5V
61mΩ @ V
GS
= -4.5V
81mΩ @ V
GS
= -2.5V
115mΩ @ V
GS
= -1.8V
210mΩ @ V
GS
= -1.5V
I
D MAX
T
A
= +25°
C
5.6A
5.1A
4.5A
3.7A
-3.8A
-3.3A
-2.8A
-2.3A
Features
Low On-Resistance
Low Input Capacitance
Low Profile, 0.6mm Max Height
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Q1
N-Channel
12V
NEW PRODUCT
Q2
P-Channel
-12V
Mechanical Data
Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe. Solderable per
MIL-STD-202, Method 208
e4
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Load Switch
Power Management Functions
Portable Power Adaptors
U-DFN2020-6
S2
D2
D1
D2
G1
S1
Pin1
Bottom View
G2
D1
D1
D2
G1
S1
G2
S2
N-CHANNEL MOSFET
P-CHANNEL MOSFET
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMC1029UFDB
-7
DMC1029UFDB
-13
Notes:
Case
U-DFN2020-6
U-DFN2020-6
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
2D = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
2D
Date Code Key
Year
Code
Month
Code
2014
B
Jan
1
Feb
2
2015
C
Mar
3
Apr
4
YM
2016
D
May
5
2017
E
Jun
6
Jul
7
2018
F
Aug
8
Sep
9
2019
G
Oct
O
Nov
N
2020
H
Dec
D
DMC1029UFDB
Document number: DS37710 Rev. 2 - 2
1 of 9
www.diodes.com
February 2015
© Diodes Incorporated
DMC1029UFDB
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
t < 5s
T
A
= +25C
T
A
= +70C
T
A
= +25C
T
A
= +70C
Symbol
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
I
AS
E
AS
Q1
N-CHANNEL
12
±8
5.6
4.4
7.2
5.8
1
20
15
12
Q2
P-CHANNEL
-12
±8
-3.8
-3.0
-5.0
-4.0
-1
-15
-12
8
Units
V
V
A
A
A
A
A
mJ
Continuous Drain Current (Note 5) V
GS
= 4.5V
NEW PRODUCT
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%)
Avalanche Current (L = 0.1mH)
Avalanche Energy (L = 0.1mH)
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Note:
5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
Symbol
Steady State
t < 5s
Steady State
t < 5s
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
1.4
2.2
91
55
20
-55 to +150
Units
W
°
C/W
°
C
DMC1029UFDB
Document number: DS37710 Rev. 2 - 2
2 of 9
www.diodes.com
February 2015
© Diodes Incorporated
DMC1029UFDB
Electrical Characteristics Q1 N-CHANNEL
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°
C
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
Min
12
—
—
0.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
17
20
24
30
0.6
914
132
119
1.26
10.5
19.6
1.2
1.6
5.0
10.5
16.6
4.1
Max
—
1.0
±100
1
29
34
44
65
1.2
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
μA
nA
V
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 12V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 5A
V
GS
= 2.5V, I
D
= 4.6A
V
GS
= 1.8V, I
D
= 4.1A
V
GS
= 1.5V, I
D
= 2A
V
GS
= 0V, I
S
= 1A
V
DS
= 6V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 6V, I
D
= 6.5A
Static Drain-Source On-Resistance
mΩ
NEW PRODUCT
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
V
DD
= 6V, V
GS
= 4.5V,
R
L
= 1.2Ω, R
G
= 1Ω
Electrical Characteristics Q2 P-CHANNEL
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°
C
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
Min
-12
—
—
-0.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
37
47
63
90
-0.65
915
225
183
56.9
10.7
17.9
1.7
3.0
5.7
11.5
27.8
26.4
Max
—
-1.0
±100
-1
61
81
115
210
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
μA
nA
V
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -12V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -4.5V, I
D
= -3.6A
V
GS
= -2.5V, I
D
= -3.2A
V
GS
= -1.8V, I
D
= -1A
V
GS
= -1.5V, I
D
= -1A
V
GS
= 0V, I
S
= -1A
V
DS
= -6V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= -6V, I
D
= -4.3A
Static Drain-Source On-Resistance
mΩ
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
V
DD
= -6V, V
GS
= -4.5V,
R
L
= 1.6Ω, R
G
= 1Ω
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMC1029UFDB
Document number: DS37710 Rev. 2 - 2
3 of 9
www.diodes.com
February 2015
© Diodes Incorporated
DMC1029UFDB
Typical Characteristics - N-CHANNEL
20.0
18.0
I
D
, DRAIN CURRENT (A)
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
5
V
GS
=1.0V
V
GS
=2.5V
V
GS
=3.0V
V
GS
=4.5V
V
GS
=8.0V
V
GS
=1.2V
V
GS
=1.8V
I
D
, DRAIN CURRENT (A)
V
GS
=2.0V
V
GS
=1.5V
20
18
16
14
12
10
8
6
4
2
0
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
2
T
A
=85℃
T
A
=150℃
T
A
=125℃
T
A
=25℃
T
A
=-55℃
V
DS
= 5.0V
NEW PRODUCT
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(Ω)
0.04
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.05
0.1
V
GS
=1.5V
V
GS
=1.8V
V
GS
=2.5V
0.08
I
D
=5.0A
0.03
0.06
I
D
=4.1A
0.02
V
GS
=4.5V
0.04
I
D
=2.0A
I
D
=4.6A
0.01
0.02
0
5
7
9
11 13 15 17 19 21
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
1
3
0
1
2
3
4
5
6
7
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
8
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.03
V
GS
= 4.5V
0.025
T
A
=125℃
0.02
T
A
=85℃
T
A
=150℃
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
1.8
1.6
V
GS
=2.5V, I
D
=3.0A
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
V
GS
=4.5V, I
D
=5.0A
0.015
T
A
=25℃
0.01
T
A
=-55℃
0.005
0
2
4
6
8
10
12
14
16
18
20
I
D,
DRAIN CURRENT(A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
DMC1029UFDB
Document number: DS37710 Rev. 2 - 2
4 of 9
www.diodes.com
February 2015
© Diodes Incorporated
DMC1029UFDB
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
V
GS(TH),
GATE THRESHOLD VOLTAGE (V)
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
-50
-25
0
25
50
75
100
125
150
T
J,
JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
V
GS
=4.5V, I
D
=5.0A
V
GS
=2.5V, I
D
=3.0A
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
10000
C
T
, JUNCTION CAPACITANCE (pF)
f=1MHz
C
iss
1000
I
D
=250μA
I
D
=1mA
NEW PRODUCT
20
18
I
S
, SOURCE CURRENT (A)
16
14
12
10
8
6
4
2
0
0
0.3
0.6
V
GS
=0V, T
A
=-55℃
0.9
1.2
1.5
V
GS
=0V
T
A
=150℃
V
GS
=0V
T
A
=125℃
V
GS
=0V
T
A
=85℃
C
oss
100
C
rss
V
GS
=0V
T
A
=25℃
10
0
2
4
6
8
10
12
V
DS
, DRAIN-SOURCE Voltage (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
8
100
R
DS(ON)
Limited
I
D
, DRAIN CURRENT (A)
P
W
=1ms
P
W
=100μs
P
W
=100
ms
P
W
=1s
6
V
DS
=6V, I
D
=6.5A
4
10
V
GS
(V)
1
P
W
=10ms
T
J(Max)
=150℃
T
A
=25℃
V
GS
=4.5V
Single Pulse
DUT on
1*MRP Board
0.01
2
0.1
P
W
=10s
DC
0
0
10
15
Qg (nC)
Figure 11. Gate Charge
5
20
0.01
0.1
1
10
V
DS,
DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
DMC1029UFDB
Document number: DS37710 Rev. 2 - 2
5 of 9
www.diodes.com
February 2015
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
