DMC3021LK4
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
Q1
V
(BR)DSS
30V
-30V
R
DS(ON)
max
21mΩ @ V
GS
= 10V
32mΩ @ V
GS
= 4.5V
39mΩ @ V
GS
= -10V
53mΩ @ V
GS
= -4.5V
I
D
max
T
C
= +25°C
14A
14A
-14A
-14A
Features and Benefits
•
•
•
•
•
•
0.6mm Profile – Ideal for Low Profile Applications
PCB Footprint of 4mm
2
Low Gate Threshold Voltage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
Q2
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
•
•
•
•
Motor Control
Power Management Functions
DC-DC Converters
Backlighting
Mechanical Data
•
•
•
•
•
•
Case: TO252-4
Case Material: Molded Plastic, "Green" Molding Compound
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.027 grams (approximate)
UL
TO252-4L
D
D
D
G2
D
S2 G2
S1 G1
G1
S2
S1
P-Channel MOSFET
Top View
Bottom View
Pinout Top View
N-Channel MOSFET
Ordering Information
(Note 4)
Part Number
DMC3021LK4-13
Notes:
Case
TO252-4
Packaging
2500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
= Manufacturer’s Marking
C3021L = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 11 = 2011)
WW = Week (01 - 53)
C3021L
YYWW
DMC3021LK4
Document number: DS35082 Rev. 5 - 2
1 of 10
www.diodes.com
April 2014
© Diodes Incorporated
DMC3021LK4
Maximum Ratings N-CHANNEL – Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
Steady
State
T
A
= +25°C
T
A
= +70°C
T
C
= +25°C
T
C
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
DM
I
AS
E
AS
Value
30
±20
9.4
7.5
14
14
70
16
13
Units
V
V
A
A
A
A
mJ
NEW PRODUCT
Continuous Drain Current (Note 6) V
GS
= 10V
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, (Notes 7) L = 0.1mH
Avalanche Energy, (Notes 7) L = 0.1mH
Maximum Ratings P-CHANNEL – Q2
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) V
GS
= -10V
Continuous Drain Current (Note 6) V
GS
= -10V
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, (Notes 7) L = 0.1mH
Avalanche Energy, (Notes 7) L = 0.1mH
Steady
State
Steady
State
T
A
= +25°C
T
A
= +70°C
T
C
= +25°C
T
C
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
DM
I
AS
E
AS
Value
-30
±20
-6.8
-5.3
-14
-14
-50
-16
13
Units
V
V
A
A
A
A
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Notes:
Symbol
T
A
= +25°C
T
A
= +70°C
T
C
= +25°C
T
C
= +70°C
Steady state
Steady state
R
θ
JA
R
θ
JC
T
J,
T
STG
P
D
Value
2.7
1.7
22
14
46
5.5
-55 to +150
Units
W
°C/W
°C
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= 25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMC3021LK4
Document number: DS35082 Rev. 5 - 2
2 of 10
www.diodes.com
April 2014
© Diodes Incorporated
DMC3021LK4
Electrical Characteristics N-CHANNEL – Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (4.5V)
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Symbol
BV
DSS
@T
C
= +25°C
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
30
—
—
1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
1.5
14
18
8.5
0.7
751
121
110
1.5
9
17.4
2.2
3
2.5
6.6
19.0
6.3
Max
—
1.0
±100
2.1
21
32
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
μA
nA
V
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 7A
V
GS
= 4.5V, I
D
= 5.6A
V
DS
= 5V, I
D
= 7A
V
GS
= 0V, I
S
= 1A
NEW PRODUCT
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 10V, V
GS
= 0V,f = 1.0MHz
V
GS
= 10V, V
DS
= 15V,
I
D
= 6A
V
DD
= 15V, V
GS
= 10V,
R
G
= 6Ω, R
L
= 1.8Ω, I
D
= 6.7A
30
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 4.0V
20
V
DS
= 5.0V
25
I
D
, DRAIN CURRENT (A)
20
15
I
D
, DRAIN CURRENT (A)
15
V
GS
= 3.5V
10
T
A
= 150°C
T
A
= 85°C
10
V
GS
= 3.0V
5
5
V
GS
= 2.5V
T
A
= 125°C
T
A
= 25°C
T
A
= -55°C
0
0
0.5
1
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig.1 Typical Output Characteristics
2
0
0
1
2
3
4
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
5
DMC3021LK4
Document number: DS35082 Rev. 5 - 2
3 of 10
www.diodes.com
April 2014
© Diodes Incorporated
DMC3021LK4
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE(
Ω
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.05
0.05
V
GS
= 4.5V
0.04
0.04
T
A
= 150°C
NEW PRODUCT
0.03
0.03
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0.02
V
GS
= 4.5V
0.02
0.01
V
GS
= 10V
0.01
0
0
5
10
15
20
25
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
30
0
0
2
6
8 10 12 14 16 18 20
I
D
, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
4
1.5
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (Normalized)
V
GS
= 10V
I
D
= 10A
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
1.7
0.05
0.04
1.3
V
GS
= 4.5V
I
D
= 5A
0.03
V
GS
= 4.5V
I
D
= 5A
1.1
0.02
V
GS
= 10V
I
D
= 10A
0.9
0.7
0.01
0.5
-50
T
J
, JUNCTION TEMPERATURE (
°
C)
Fig. 5 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Fig. 6 On-Resistance Variation with Temperature
2.5
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
20
18
I
S
, SOURCE CURRENT (A)
2
I
D
= 1mA
16
14
12
10
8
6
4
2
T
A
= 25°C
1.5
1
I
D
= 250µA
0.5
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Fig. 7 On-Resistance Variation with Temperature
0
0.2 0.3
0.4 0.5 0.6 0.7 0.8 0.9 1
1.1 1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
DMC3021LK4
Document number: DS35082 Rev. 5 - 2
4 of 10
www.diodes.com
April 2014
© Diodes Incorporated
DMC3021LK4
10,000
T
A
= 150°C
10,000
f=1MHz
1,000
T
A
= 125°C
CT, JUNCTION CAPACITANCE (pF)
I
DSS
, LEAKAGE CURRENT (nA)
1,000
C
iss
NEW PRODUCT
100
T
A
= 85°C
100
C
oss
C
rss
10
T
A
= 25°C
5
10
15
20
25
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Drain-Source Leakage Current vs. Voltage
1
0
10
0
5
10
15
20
25
V
DS
, DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Junction Capacitance
30
10
100
R
DS(ON)
Limited
8
I
D
, DRAIN CURRENT (A)
V
DS
= 15V
I
D
= 6A
10
DC
P
W
= 10s
P
W
= 1s
V
GS
(V)
6
1
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
P
W
= 100µs
P
W
= 10µs
4
2
0.1
T
J(MAX)
= 150
°
C
T
A
= 25
°
C
Single Pulse
0
0
2
10 12 14 16 18
Q
G
- (nC)
Fig. 11 Gate Charge Characteristics
4
6
8
20
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
100
DMC3021LK4
Document number: DS35082 Rev. 5 - 2
5 of 10
www.diodes.com
April 2014
© Diodes Incorporated
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