DMG6402LVT
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on) max
30m @ V
GS
= 10V
42m @ V
GS
= 4.5V
Features and Benefits
I
D
T
A
= +25°C
6A
5A
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free Finish; RoHS compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
ADVANCE INFORMATION
NEW PRODUCT
30V
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.013 grams (approximate)
Drain
Applications
DC-DC Converters
Power Management Functions
Backlighting
TSOT26
D
1
D
2
G
3
Top View
6
5
4
D
D
S
Source
Gate
Body
Diode
Top View
Pin Configuration
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMG6402LVT-7
DMG6402LVT-13
Notes:
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
6402 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
6402
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
Feb
2
2012
Z
Mar
3
Apr
4
2013
A
May
5
Jun
6
YM
2014
B
Jul
7
2015
C
Aug
8
Sep
9
2016
D
Oct
O
Nov
N
2017
E
Dec
D
May 2013
© Diodes Incorporated
DMG6402LVT
Document number: DS35831 Rev. 3 - 2
1 of 6
HYPERLINK "http://www.diodes.com"
DMG6402LVT
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
ADVANCE INFORMATION
NEW PRODUCT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
t<10s
Steady
State
t<10s
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
S
I
DM
Value
30
±20
6.0
4.8
7.5
5.9
5.0
4.0
6
4.8
2
31
Units
V
V
A
A
A
A
A
A
Continuous Drain Current (Note 5) V
GS
= 4.5V
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
T
A
= +25°C
T
A
= +70°C
Steady state
t<10s
Symbol
P
D
R
JA
R
JC
T
J,
T
STG
Value
1.75
1.1
72
50
23
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
30
1
Typ
1.5
22
32
10
0.75
498
52
45
2.4
11.4
1.4
2
3.4
6.2
13.9
2.8
Max
1
100
2
30
42
1.0
Unit
V
μ
A
nA
V
m
S
V
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 30V, V
GS
= 0V
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 7A
V
GS
= 4.5V, I
D
= 5.6A
V
DS
= 5V, I
D
= 7A
V
GS
= 0V, I
S
= 1A
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
GS
= 10V, V
DS
= 15V, I
D
= 5.8A
pF
nC
nS
V
DD
= 15V, V
GS
= 10V,
R
L
= 2.6Ω, R
G
= 3Ω
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
DMG6402LVT
Document number: DS35831 Rev. 3 - 2
2 of 6
www.diodes.com
May 2013
© Diodes Incorporated
DMG6402LVT
30
V
GS
= 8.0V
20
V
GS
= 4.5V
25
16
I
D
, DRAIN CURRENT (A)
V
DS
= 5V
ADVANCE INFORMATION
NEW PRODUCT
I
D
, DRAIN CURRENT (A)
20
15
V
GS
= 4.0V
12
V
GS
= 3.5V
8
T
A
= 150°C
T
A
= 125°C
10
V
GS
= 3.0V
5
0
0
4
T
A
= 85°C
V
GS
= 2.8V
V
GS
= 2.5V
T
A
= 25°C
T
A
= -55°C
0.5
1
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
2
0
0
0.5
1
1.5
2
2.5
3
3.5
V
GS
, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
4
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
5
10
15
20
25
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
30
V
GS
= 4.5V
V
GS
= 8.0V
0.08
V
GS
= 4.5V
T
A
= 150°C
0.06
T
A
= 125°C
0.04
T
A
= 85°C
T
A
= 25°C
0.02
T
A
= -55°C
0
0
8
12
16
20
I
D
, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
4
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
1.7
1.5
V
GS
= 4.5V
I
D
= 5A
V
GS
= 10V
I
D
= 10A
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
V
GS
= 10V
I
D
= 10A
V
GS
= 4.5V
I
D
= 5A
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.3
1.1
0.9
0.7
0.5
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
DMG6402LVT
Document number: DS35831 Rev. 3 - 2
3 of 6
www.diodes.com
May 2013
© Diodes Incorporated
DMG6402LVT
2.0
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
20
18
I
S
, SOURCE CURRENT (A)
1.6
I
D
= 250µA
I
D
= 1mA
16
14
12
10
8
6
4
2
T
A
= 25°C
ADVANCE INFORMATION
NEW PRODUCT
1.2
0.8
0.4
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
1,000
0
-50
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
10
V
GS
, GATE-SOURCE VOLTAGE (V)
8
C, CAPACITANCE (pF)
C
iss
6
V
DS
= 15V
I
D
= 5.8A
100
C
oss
C
rss
4
2
f = 1MHz
10
0
5
10
15
20
25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Capacitance
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
30
0
0
2
4
6
8
Q
g
, TOTAL GATE CHARGE (nC)
Fig. 10 Gate-Charge Characteristics
10
0.1
D = 0.9
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Single Pulse
R
JA
(t) = r(t) * R
JA
R
JA
= 54°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 11 Transient Thermal Resistance
10
100
1,000
0.001
0.00001
0.0001
DMG6402LVT
Document number: DS35831 Rev. 3 - 2
4 of 6
www.diodes.com
May 2013
© Diodes Incorporated
DMG6402LVT
Package Outline Dimensions
ADVANCE INFORMATION
NEW PRODUCT
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
D
e1
E1
E
c
e
6x b
4x
1
L
L2
A
A2
A1
TSOT26
Dim Min Max Typ
A
— 1.00 —
A1
0.01 0.10 —
A2
0.84 0.90 —
D
—
— 2.90
E
—
— 2.80
E1
—
— 1.60
b
0.30 0.45 —
c
0.12 0.20 —
e
—
— 0.95
e1
—
— 1.90
L
0.30 0.50 —
L2
—
— 0.25
θ
0°
8°
4°
θ1
4°
12°
—
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
C
Dimensions Value (in mm)
C
0.950
X
0.700
Y
1.000
Y1
3.199
Y1
Y (6x)
X (6x)
DMG6402LVT
Document number: DS35831 Rev. 3 - 2
5 of 6
www.diodes.com
May 2013
© Diodes Incorporated
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