D40C1 datasheet, PDF - EEWORLD Datasheet

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D40C1: DescriptionNPN SILICON DARLINGTON POWER TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size417KB，2 Pages; ManufacturerCentral Semiconductor

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D40C1 Overview

NPN SILICON DARLINGTON POWER TRANSISTOR

D40C1 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	_compli
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.5 A
Collector-based maximum capacity	10 pF
Collector-emitter maximum voltage	30 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	10000
JEDEC-95 code	TO-202
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	6.25 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	80 MHz
VCEsat-Max	1.5 V

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D40C1

NPN SILICON

DARLINGTON POWER

TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR D40C1 type is an

NPN silicon Darlington power transistor designed for

general purpose amplifier applications where high gain

is required.

MARKING: FULL PART NUMBER

TO-202 CASE

MAXIMUM RATINGS:

(TC=25°C)

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCES

VCEO

VEBO

ICM

TJ, Tstg

UNITS

°C

°C/W

0.5

1.0

6.25

-55 to +150

ELECTRICAL CHARACTERISTICS:

(TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

ICES

VCE=30V

ICBO

VCE=30V, TC=150°C

IEBO

BVCEO

VCE(SAT)

VBE(SAT)

hFE

Ccb

ton

toff

VEB=13V

lC=10mA

lC=500mA,

IB=0.5mA

10K

MAX

500

100

1.5

2.0

70K

UNITS

μA

MHz

VCE=5.0V, IC=200mA

VCE=5.0V, lC=20mA

VCB=10V, f=1.0MHz

lC=1.0A, IB1=1.0mA

lC=1.0A, IB1=IB2=1.0mA

120

1200

R1 (23-January 2012)

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