D44E3 datasheet, PDF - EEWORLD Datasheet

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D44E3: DescriptionSILICON NPN DARLINGTON POWER TRANSISTORS; CategoryDiscrete semiconductor The transistor; File Size345KB，2 Pages; ManufacturerCentral Semiconductor

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D44E3 Overview

SILICON NPN DARLINGTON POWER TRANSISTORS

D44E3 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	TO-220, 3 PIN
Reach Compliance Code	_compli
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	10 A
Collector-emitter maximum voltage	80 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	1000
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	50 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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D44E1

D44E2

D44E3

SILICON

NPN DARLINGTON

POWER TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR D44E series

devices are silicon NPN Darlington power transistors,

manufactured by the epitaxial base process, with

2 integrated resistors and 1 diode for stability and

protection. These devices are designed for switching

and output applications where high gain is desired.

MARKING: FULL PART NUMBER

TO-220 CASE

MAXIMUM RATINGS:

(TC=25°C)

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Continuous Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCEO

VCES

VEBO

TJ, Tstg

D44E1

D44E2

7.0

1.0

-65 to +150

1.56

D44E3

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

ICES

VCE=Rated VCES

IEBO

VEB=7.0V

BVCEO

VCE(SAT)

VBE(SAT)

hFE

Cob

ton

toff

IC=100mA (D44E1)

IC=100mA (D44E2)

IC=100mA (D44E3)

IC=5.0A, IB=10mA

IC=10A, IB=20mA

IC=5.0A, IB=10mA

VCE=5.0V, IC=5.0A

VCB=10V, IE=0, f=1.0MHz

IC=10A, IB1=20mA

IC=10A, IB1=IB2=20mA

1000

MAX

500

5.0

UNITS

μA

1.5

3.0

2.5

200

1.0

2.5

μs

R1 (4-March 2014)

D44E3 Related Products

	D44E3	D44E1	D44E2
Description	SILICON NPN DARLINGTON POWER TRANSISTORS	SILICON NPN DARLINGTON POWER TRANSISTORS	SILICON NPN DARLINGTON POWER TRANSISTORS
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor
package instruction	TO-220, 3 PIN	TO-220, 3 PIN	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	_compli	_compli	_compli
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	10 A	10 A	10 A
Collector-emitter maximum voltage	80 V	40 V	60 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	1000	1000	1000
JEDEC-95 code	TO-220AB	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e0	e0	e0
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN	NPN
Maximum power dissipation(Abs)	50 W	50 W	50 W
surface mount	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON

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