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H2A1-H780

Description
IR High Power single chip LED
File Size246KB,4 Pages
ManufacturerRoithner Lasertechnik GmbH
Websitehttp://www.roithner-laser.com/
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H2A1-H780 Overview

IR High Power single chip LED

H2A1-H780
IR High Power single chip LED
H2A1-H780 is a GaAlAs based, high power 780 nm single chip LED in standard hexagonal Aluminum package for
general application. Slots in the Aluminum-core PCB allow for easy mounting of standard collimating optics and are
also suitable for M3 or M4 mounting screws. Large electrical interconnection pads on the PCB allow for convenient
installation.
Specifications
Structure: GaAlAs
Peak Wavelength: 780 nm
Optical Output Power: typ. 70 mW
Life Time: > 10.000 hours
Housing: standard emitter package
Absolute Maximum Ratings (T
a
=25°C)
Parameter
Power Dissipation, DC
Forward Current, DC
Pulsed Current (1% duty cycle, 1kHz)
Reverse Voltage
Operating Temperature
Storage Temperature
Soldering Temperature (max. 1,5 s)
Symbol
P
D
I
F
I
FP
U
R
T
opr
T
stg
T
sol
Value
1000
500
1000
-5
-30 … +70
-30 … +85
330
Unit
mW
mA
mA
V
°C
°C
°C
Electro-Optical Characteristics (T
a
=25°C)
Parameter
Forward Current
Viewing Angle
CW Output Power
Peak Wavelength
Forward Voltage
Half Width (FWHM)
Switching time
Symbol
I
F
φ
P
O
λ
P
U
F
Δλ
TR, tF
Condition
I
F
= 350 mA
I
F
= 350 mA
I
F
= 350 mA
I
F
= 350 mA
IF = 350 mA
IF = 350 mA
Min.
-
Typ.
350
±
75
70
780
1.7
30
40
Max.
-
Unit
mA
deg.
mW
nm
V
nm
ns
-
-
-
Wavelength measurements tolerance is +/- 2%
Output power measurement tolerance is +/- 10%
Voltage measurement tolerance is +/- 2%
Device Materials
Item
Foundation
Lens
Electrodes
PCB
13.08.2012
Material
Plastic
Acryl
AgCu
Al
H2A1-H780
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