EEWORLDEEWORLDEEWORLD

Part Number

Search

CMLD2004G_15

Description
HIGH VOLTAGE SWITCHING DIODE
File Size503KB,3 Pages
ManufacturerCentral Semiconductor
Download Datasheet View All

CMLD2004G_15 Overview

HIGH VOLTAGE SWITCHING DIODE

CMLD2004G
SURFACE MOUNT SILICON
DUAL, ISOLATED
HIGH VOLTAGE
SWITCHING DIODE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLD2004G
contains two (2) isolated high voltage silicon switching
diodes, manufactured by the epitaxial planar process,
epoxy molded in an SOT-563 surface mount package.
These devices are designed for applications requiring
high voltage capability.
MARKING CODE: DG
SOT-563 CASE
MAXIMUM RATINGS:
(TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Peak Repetitive Reverse Current
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
IR
IR
BVR
VF
CJ
trr
SYMBOL
VR
VRRM
IO
IF
IFRM
IFSM
IFSM
PD
TJ, Tstg
Θ
JA
240
300
200
225
625
4.0
1.0
250
-65 to +150
500
UNITS
V
V
mA
mA
mA
A
A
mW
°C
°C/W
CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
MAX
VR=240V
100
VR=240V, TA=150°C
100
IR=100μA
IF=100mA
VR=0, f=1.0MHz
IF=IR=30mA, Irr=3.0mA, RL=100Ω
300
1.0
5.0
50
UNITS
nA
μA
V
V
pF
ns
R2 (15-June 2015)

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 75  1269  1082  2430  2273  2  26  22  49  46 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号