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Datasheet> All Categories > Discrete semiconductor> diode> 3N251-M
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3N251-M

Description
1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size456KB，2 Pages
ManufacturerCentral Semiconductor
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3N251-M Overview

1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

3N251-M Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Reach Compliance Code_compli
Minimum breakdown voltage800 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JESD-30 codeR-PSIP-T4
JESD-609 codee0
Maximum non-repetitive peak forward current30 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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Download Datasheet
3N247-M SERIES
SILICON BRIDGE RECTIFIERS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 3N247-M series
types are silicon single phase, full wave bridge rectifiers
designed for general purpose applications.
MARKING: FULL PART NUMBER
CASE B-M
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
3N
SYMBOL 247-M
Peak Repetitive Reverse Voltage
VRRM
100
DC Blocking Voltage
VR
100
RMS Reverse Voltage
Average Forward Current (TA=75°C)
Peak Forward Surge Current
Operating and Storage
Junction Temperature
ELECTRICAL
SYMBOL
IR
VF
VR(RMS)
IO
IFSM
TJ, Tstg
70
3N
248-M
200
200
140
3N
249-M
400
400
280
1.5
30
3N
250-M
600
600
420
3N
251-M
800
800
560
3N
252-M UNITS
1000
V
1000
700
V
V
A
A
°C
-65 to +150
CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
MAX
VR=Rated VRRM
10
IF=3.14A
1.3
UNITS
μA
V
R3 (25-February 2013)

3N251-M Related Products

3N251-M 3N249-M BB135_15 3N252-M 3N247-M 3N248-M
Description 1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE UHF variable capacitance diode 1.5 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
Is it lead-free? Contains lead Contains lead - Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible - incompatible incompatible incompatible
Reach Compliance Code _compli _compli - unknow unknown _compli
Minimum breakdown voltage 800 V 400 V - 1000 V 100 V 200 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON - SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V 1.3 V - 1.3 V 1.3 V 1.3 V
JESD-30 code R-PSIP-T4 R-PSIP-T4 - R-PSIP-T4 R-PSIP-T4 R-PSIP-T4
JESD-609 code e0 e0 - e0 e0 e0
Maximum non-repetitive peak forward current 30 A 30 A - 30 A 30 A 30 A
Number of components 4 4 - 4 4 4
Phase 1 1 - 1 1 1
Number of terminals 4 4 - 4 4 4
Maximum operating temperature 150 °C 150 °C - 150 °C 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C - -65 °C -65 °C -65 °C
Maximum output current 1.5 A 1.5 A - 1.5 A 1.5 A 1.5 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE - IN-LINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 800 V 400 V - 1000 V 100 V 200 V
surface mount NO NO - NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE - SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 - 1 1 1

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