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IMX8_15

Description
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
File Size80KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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IMX8_15 Overview

DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

IMX8
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (IMT4)
Small Surface Mount Package
Lead Free/RoHS Compliant (Note 3)
"Green" Device, Note 4 and 5
A
B
2
B
1
E
1
SOT-26
Dim
A
B C
Min
0.35
1.50
2.70
2.90
0.013
1.00
0.35
0.10
Max
0.50
1.70
3.00
3.10
0.10
1.30
0.55
0.20
Typ
0.38
1.60
2.80
0.95
0.55
3.00
0.05
1.10
0.40
0.15
B
C
D
F
H
M
Mechanical Data
Case: SOT-26
Case Material: Molded Plastic, "Green" Molding
Compound, Note 5. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Copper leadframe).
Marking Information: KX8, See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.016 grams (approximate)
K
C
2
E
2
C
1
H
J
K
L
M
α
J
D
B
2
B
1
E
1
F
L
All Dimensions in mm
C
2
E
2
C
1
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
θ
JA
T
j
, T
STG
Value
120
120
5.0
50
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Notes:
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
f
T
Min
120
120
5.0
180
Typ
140
Max
0.5
0.5
820
0.5
Unit
V
V
V
μA
μA
V
MHz
I
C
= 50μA
I
C
= 1.0mA
I
E
= 50μA
V
CB
= 100V
V
EB
= 4.0V
I
C
= 2.0mA, V
CE
= 6.0V
I
C
= 10mA, I
B
= 1.0mA
V
CE
= 12V, I
C
= 2.0mA,
f = 100MHz
Test Condition
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30304 Rev. 8 - 2
1 of 3
www.diodes.com
IMX8
© Diodes Incorporated

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