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TSM4NB65CIC0

Description
650V N-Channel Power MOSFET
File Size1MB,10 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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TSM4NB65CIC0 Overview

650V N-Channel Power MOSFET

TSM4NB65
650V N-Channel Power MOSFET
TO-220
ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
Key Parameter Performance
Parameter
V
DS
R
DS(on)
(max)
Q
g
Value
650
3.37
13.46
Unit
V
Ω
nC
TO-251
(IPAK)
TO-252
(DPAK)
Application
Power Supply.
Lighting
Block Diagram
Ordering Information
Part No.
TSM4NB65CZ C0
TSM4NB65CZ C0G
TSM4NB65CI C0
TSM4NB65CI C0G
TSM4NB65CH C5G
Package
TO-220
TO-220
ITO-220
ITO-220
TO-251
Packing
50pcs / Tube
50pcs / Tube
50pcs / Tube
50pcs / Tube
75pcs / Tube
N-Channel MOSFET
TSM4NB65CP ROG
TO-252
2.5kpcs / 13” Reel
Note:
“G” denotes for Halogen- and Antimony-free as those which
contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br
+ Cl) and <1000ppm antimony compounds
Absolute Maximum Ratings
(T
C
= 25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Note 1)
Symbol
V
DS
V
GS
Tc = 25℃
Tc = 100℃
I
D
I
DM
E
AS
P
TOT
T
J
T
STG
Limit
IPAK/DPAK
ITO-220
650
±30
4
2.4
16
31.2
50
25
-55 to +150
-55 to +150
70
TO-220
Unit
V
V
A
A
A
mJ
W
Pulsed Drain Current
(Note 2)
Single Pulse Avalanche Energy
(Note 3)
Total Power Dissipation @ T
C
= 25℃
Operating Junction Temperature
Storage Temperature Range
1/10
Version: C14

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