TSM4NB65
650V N-Channel Power MOSFET
TO-220
ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
Key Parameter Performance
Parameter
V
DS
R
DS(on)
(max)
Q
g
Value
650
3.37
13.46
Unit
V
Ω
nC
TO-251
(IPAK)
TO-252
(DPAK)
Application
●
●
Power Supply.
Lighting
Block Diagram
Ordering Information
Part No.
TSM4NB65CZ C0
TSM4NB65CZ C0G
TSM4NB65CI C0
TSM4NB65CI C0G
TSM4NB65CH C5G
Package
TO-220
TO-220
ITO-220
ITO-220
TO-251
Packing
50pcs / Tube
50pcs / Tube
50pcs / Tube
50pcs / Tube
75pcs / Tube
N-Channel MOSFET
TSM4NB65CP ROG
TO-252
2.5kpcs / 13” Reel
Note:
“G” denotes for Halogen- and Antimony-free as those which
contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br
+ Cl) and <1000ppm antimony compounds
Absolute Maximum Ratings
(T
C
= 25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Note 1)
Symbol
V
DS
V
GS
Tc = 25℃
Tc = 100℃
I
D
I
DM
E
AS
P
TOT
T
J
T
STG
Limit
IPAK/DPAK
ITO-220
650
±30
4
2.4
16
31.2
50
25
-55 to +150
-55 to +150
70
TO-220
Unit
V
V
A
A
A
mJ
W
℃
℃
Pulsed Drain Current
(Note 2)
Single Pulse Avalanche Energy
(Note 3)
Total Power Dissipation @ T
C
= 25℃
Operating Junction Temperature
Storage Temperature Range
1/10
Version: C14
TSM4NB65
650V N-Channel Power MOSFET
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Symbol
R
ӨJC
R
ӨJA
Limit
IPAK/DPAK
2.5
83
ITO-220
5
62.5
TO-220
1.78
62.5
Unit
℃/W
℃/W
Electrical Specifications
(T
A
=25℃ unless otherwise noted)
Parameter
Static
(Note 4)
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transfer Conductance
Dynamic
(Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
(Note 6)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode Ratings and Characteristic
(Note 4)
Source Current
Source Current (Pulse)
Diode Forward Voltage
Integral reverse diode in
the MOSFET
I
S
= 4A, V
GS
= 0V
I
S
I
SM
V
SD
--
--
--
--
--
--
4
16
1.13
A
A
V
V
GS
= 10V, I
D
= 4A,
V
DD
= 300V, R
G
= 25Ω
t
d(on)
t
r
t
d(off)
t
f
--
--
--
--
11
20
30
19
--
--
--
--
ns
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 480V, I
D
= 4A,
V
GS
= 10V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
--
--
--
--
--
--
13.46
2.98
6.66
549
75
18
--
--
--
--
--
--
pF
nC
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 2A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 650V, V
GS
= 0V
V
GS
= ±30V, V
DS
= 0V
V
DS
= 40V, I
D
= 2A
BV
DSS
R
DS(ON)
V
GS(TH)
I
DSS
I
GSS
g
fs
650
--
2.5
--
--
--
--
2.7
3.6
--
--
2.6
--
3.37
4.5
1
±100
--
V
Ω
V
µA
nA
S
Conditions
Symbol
Min
Typ
Max
Unit
Notes:
1. Current limited by package
2. Pulse width limited by the maximum junction temperature
3. L = 10mH, I
AS
= 2.4A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25℃
4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
5. For DESIGN AID ONLY, not subject to production testing.
6. Switching time is essentially independent of operating temperature.
2/10
Version: C14
TSM4NB65
650V N-Channel Power MOSFET
Electrical Characteristics Curves
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate-Source Voltage vs. Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Current vs. Voltage
3/10
Version: C14
TSM4NB65
650V N-Channel Power MOSFET
Electrical Characteristics Curves
Capacitance vs. Drain-Source Voltage
BV
DSS
vs. Junction Temperature
Maximum Safe Operating Area (TO-220)
Maximum Safe Operating Area (ITO-220)
Maximum Safe Operating Area (DPAK/IPAK)
4/10
Version: C14
TSM4NB65
650V N-Channel Power MOSFET
Electrical Characteristics Curves
Normalized Thermal Transient Impedance, Junction-to-Case (TO-220)
Normalized Effective Transient
Thermal Impedance
10
10
10
10
10
10
1
0
-1
-2
-3
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single pulse
10
-6
-4
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case (ITO-220)
Normalized Effective Transient
Thermal Impedance
10
10
10
10
10
1
0
-1
-2
-3
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single pulse
10
-5
10
-6
10
-4
10
-4
10
-3
10
-2
10
-1
10
0
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case (DPAK/IPAK)
Normalized Effective Transient
Thermal Impedance
10
10
10
10
10
1
0
-1
-2
-3
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single pulse
10
-5
10
-6
10
-4
10
-4
10
-3
10
-2
10
-1
10
0
Square Wave Pulse Duration (s)
5/10
Version: C14
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