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DTC143ZUA

Description
PNP Small Signal Transistor
CategoryDiscrete semiconductor    The transistor   
File Size209KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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DTC143ZUA Overview

PNP Small Signal Transistor

DTC143ZUA Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
Other featuresBUILT IN BIAS RESISTANCE RATIO IS 10
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
DTC143 ZM/ZE/ZUA/ZCA/ZSA
Taiwan Semiconductor
Small Signal Product
PNP Small Signal Transistor
FEATURES
- Built-in bias resistors enable the configuration of
an inverter circuit without connecting external input resistor
(see equivalent circuit)
- The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects
- Only the on/off conditions need to be set for
operation,marking device design easy
- Green compound (Halogen free) with suffix "G"
on packing code and prefix "G" on date code
SOT523/SOT323/SOT23
1. IN 2.GUD 3.OUT
3
SOT-723
1. BASE
2
2. EMITTER
3. COLLECTOR
1
TO92S
1.GUD 2.OUT 3.IN
Equivalent Circuit
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25
unless otherwise noted)
PARAMETER
Power Dissipation
Supply Voltage
Input Voltage
Output Current
Junction and Storage Temperature Range
SYMBOL
PD
V
CC
V
IN
I
O
I
C(MAX)
TJ, T
STG
VALUE
ZM
100
ZE
150
ZUA / ZCA
200
-50
-5 ~ +30
100
100
-55 to + 150
ZSA
300
UNIT
mW
V
V
mA
°C
Notes: Valid provided that electrodes are kept at ambient temperature
PARAMETER
SYMBOL
V
I(on)
V
I(off)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
MIN
0.5
TYP
MAX
1.3
CONDITION
UNIT
V
V
mA
µA
KΩ
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
V
O
= 0.3 V , I
O
= 5 mA
V
CC
= 5 V , I
O
= 100
µA
I
O
/ I
I
= 5 mA / 0.25 mA
V
I
= 5 V
V
CC
= 50 V , V
I
= 0
V
O
= 5 V , I
O
= -10 mA
0.1
0.3
1.8
0.5
80
3.29
8
4.7
10
250
6.11
12
V
CE
=10V, I
E
=-5 mA, f=100 MHz
MHz
Document Number: DS_S1404021
Version: B14

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Maker Taiwan Semiconductor - Taiwan Semiconductor - Taiwan Semiconductor
Reach Compliance Code unknow - unknow - unknow

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