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TSF10H200C

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size239KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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TSF10H200C Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN

TSF10H100C thru TSF10H200C
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
ITO-220AB
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters,
lighting and on-board DC/DC converters.
MECHANICAL DATA
Case:
ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque: 0.56 Nm max.
Weight:
1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward
rectified current
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
dV/dt
TYP
Instantaneous forward
voltage per diode (Note1)
I
F
= 5A
I
F
= 5A
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
V
F
I
R
R
θJC
T
J
T
STG
0.62
0.55
-
-
MAX
0.70
0.63
100
15
TYP
0.66
0.58
-
-
TSF10H
100C
100
TSF10H
120C
120
10
5
100
10000
MAX
0.74
0.66
100
15
4
- 55 to +150
- 55 to +150
TYP
0.78
0.64
-
1.5
MAX
0.88
0.72
100
10
TYP
0.81
0.67
-
1.5
MAX
0.91
0.75
100
10
V
μA
mA
°C/W
°C
°C
TSF10H
150C
150
TSF10H
200C
200
UNIT
V
A
A
V/μs
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load per diode
Voltage rate of change (Rated V
R
)
Instantaneous reverse current per
diode at rated reverse voltage
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with pulse width=300μs, 1% duty cycle
Document Number: DS_D1411070
Version: H14

TSF10H200C Related Products

TSF10H200C TSF10H100C_14 TSF10H120C TSF10H150C TSF10H100C
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