DXT13003EK
460V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252
Features
•
•
•
•
•
•
BV
CEO
> 460V
BV
CES
> 700V
BV
EBO
> 9V
I
C
= 1.5A high Continuous Collector Current
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
•
•
•
•
•
Case: TO252 (DPAK)
Case Material: Molded Plastic, "Green" Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads; Solderable per
MIL-STD-202, Method 208
Weight: 0.34 grams (approximate)
TO252
(DPAK)
C
B
E
Top View
Device Schematic
Top View
Pin-Out
Ordering Information
(Note 4)
Product
DXT13003EK-13
Notes:
Compliance
Standard
Marking
13003E
Reel Size (inches)
13
Tape Width (mm)
16
Quantity per Reel
2,500
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
13003E = Product Type Marking Code
= Manufacturer’s Code Marking
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 14 = 2014)
WW = Week Code (01-53)
DXT13003EK
Datasheet Number: DS37296 Rev.1 - 2
1 of 7
www.diodes.com
May 2014
© Diodes Incorporated
DXT13003EK
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Emitter Voltage (V
BE
= 0V)
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current (Note 5)
Continuous Base Current
Peak Pulse Base Current (Note 5)
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
Value
700
460
9
1.5
3
0.75
1.5
Unit
V
V
V
A
A
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
(Note 6)
(Note 7)
(Note 8)
(Note 9)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
(Note 10)
Symbol
P
D
Value
3.9
2.5
2.1
1.6
32
51
59
80
3
-55 to +150
Unit
W
Thermal Resistance, Junction to Ambient Air
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
R
θJA
R
θJL
T
J
, T
STG
°C/W
°C
ESD Ratings
(Note 11)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
8,000
400
Unit
V
V
JEDEC Class
3B
C
5. Pulse test for pulse width < 5ms, duty cycle
≤
10%.
6. For a device mounted with the exposed collector pad on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
7. Same as note (6), except the device is surface mounted on 25mm x 25mm 2oz copper.
8. Same as note (6), except the device is surface mounted on 25mm x 25mm 1oz copper.
9. Same as note (6), except mounted on minimum recommended pad (MRP) layout.
10. Thermal resistance from junction to solder-point (on the exposed collector pad).
11. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DXT13003EK
Datasheet Number: DS37296 Rev.1 - 2
2 of 7
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May 2014
© Diodes Incorporated
DXT13003EK
Thermal Characteristics and Derating Information
I
C
Collector Current (A)
1
V
CE(sat)
Limit
DC
1s
100ms
10ms
T
amb
=25°C
25mm x 25mm
1oz FR4
1ms
100µs
I
C
Collector Current (A)
1
V
CE(sat)
Limit
DC
1s
100ms
10ms
T
amb
=25°C
50mm x 50mm
2oz FR4
1ms
100µs
100m
100m
10m
10m
1m
V
CE
Collector-Emitter Voltage (V)
1
10
100
1m
1
10
100
Safe Operating Area
T
amb
=25°C
V
CE
Collector-Emitter Voltage (V)
Safe Operating Area
T
amb
=25°C
35
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
60
50
40
30
20
10
0
100µ
25mm x 25mm
1oz FR4
30
25
20
15
10
5
0
100µ
50mm x 50mm
2oz FR4
D=0.5
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
D=0.2
D=0.1
Single Pulse
D=0.05
1m
10m 100m
1
10
100
1k
1m
10m 100m
1
10
100
1k
Transient Thermal Impedance
Single Pulse
T
amb
=25°C
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
20
40
60
80
100 120 140 160
50mm x 50mm
2oz FR4
25mm x 25mm
1oz FR4
Max Power Dissipation (W)
100
50mm x 50mm
2oz FR4
10
25mm x 25mm
1oz FR4
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Max Power Dissipation (W)
Temperature (°C)
Pulse Power Dissipation
Derating Curve
DXT13003EK
Datasheet Number: DS37296 Rev.1 - 2
3 of 7
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May 2014
© Diodes Incorporated
DXT13003EK
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC current transfer Static ratio (Note 12)
Symbol
BV
CES
BV
CEO
BV
EBO
I
CEV
h
FE
Min
700
460
9
—
15
14
5
—
—
Typ
—
—
—
—
—
Max
—
—
—
10
—
Unit
V
V
V
µA
—
—
—
V
V
pF
MHz
µs
Test Condition
I
C
= 100µA, V
BE
= 0V
I
C
= 100µA
I
E
= 100µA
V
CE
= 700V, V
BE
= -1.5V
I
C
= 0.3A, V
CE
= 2V
I
C
= 0.5A, V
CE
= 2V
I
C
= 1.0A, V
CE
= 2V
I
C
= 0.5A, I
B
= 0.1A
I
C
= 1A, I
B
= 0.25A
I
C
= 0.5A, I
B
= 0.1A
I
C
= 1A, I
B
= 0.25A
V
CB
= 10V, f = 0.1MHz
I
C
= 0.1A, V
CE
= 10V
I
C
= 1A,V
CC
= 125V, I
B1
= 0.2A,
I
B2
= -0.2A
17
—
30
25
0.3
0.4
1.0
1.2
Collector-Emitter Saturation Voltage (Note 12)
Base-Emitter Saturation Voltage (Note 12)
Output Capacitance
Transition Frequency
Turn-on Time with Resistive Load
Storage Time with Resistive Load
Fall Time with Resistive Load
Note:
V
CE(sat)
V
BE(sat)
C
ob
f
T
t
on
t
s
t
f
0.17
0.29
—
—
—
—
—
4
—
—
—
16
—
0.43
1.64
0.28
—
—
—
—
—
12. Measured under pulsed conditions. Pulse width
≤
300μs. Duty cycle
≤
2%.
DXT13003EK
Datasheet Number: DS37296 Rev.1 - 2
4 of 7
www.diodes.com
May 2014
© Diodes Incorporated
DXT13003EK
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
DXT13003EK
Datasheet Number: DS37296 Rev.1 - 2
5 of 7
www.diodes.com
May 2014
© Diodes Incorporated
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