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BAS85_14

Description
Hermetically Sealed Glass Fast Switching Schottky Barrier Diodes
File Size184KB,3 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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BAS85_14 Overview

Hermetically Sealed Glass Fast Switching Schottky Barrier Diodes

BAS85
Taiwan Semiconductor
Small Signal Product
CREAT BY ART
Hermetically Sealed Glass Fast Switching Schottky Barrier Diodes
FEATURES
- Low forward voltage drop
- Ideal for automated placement
- Hermetically sealed glass
- Compression bonded construction
- All external surfaces are corrosion
resistant and leads are readily solderable
- Solder hot dip tin (Sn) lead finish
MINI MELF
MECHANICAL DATA
- Polarity: Indicated by black cathode band
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
SYMBOL
P
D
V
RRM
V
R
I
F(AV)
I
FSM
T
J
T
STG
SYMBOL
I
R
=10μA
V
R
=25V
I
F
=0.1mA
I
F
=1.0mA
I
F
=10mA
I
F
=30mA
I
F
=100mA
Reverse Recovery Time
(Note 1)
t
rr
5
10
V
R
=1V, f=1.0MHz
C
J
Junction Capacitance
Note 1: Reverse recovery test conditions : I
F
=I
R
=10mA, R
L
=100Ω, I
RR
=1mA
V
F
B
V
I
R
MIN
30
2
0.24
0.32
0.40
0.50
0.80
ns
pF
V
VALUE
200
30
30
200
4
125
-65 to +125
TYP
MAX
UNIT
mW
V
V
mA
A
o
o
Power Dissipation
Repetitive Peak Reverse Voltage
Maximum DC Blocking Voltage
Average Forward Rectified Current
Peak Forward Surge Current
Operating Junction Temperature
Storage Temperature Range
PARAMETER
Breakdown Voltage
Reverse Leakage Current
Forward Voltage
C
C
UNIT
V
μA
Document Number: DS_S1412007
Version: C14

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BAS85_14 BAS85-L0L0G BAS85L0G
Description Hermetically Sealed Glass Fast Switching Schottky Barrier Diodes Hermetically Sealed Glass Fast Switching Schottky Barrier Diodes Hermetically Sealed Glass Fast Switching Schottky Barrier Diodes

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