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BAV19W-G

Description
0.2 A, 100 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size190KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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BAV19W-G Overview

0.2 A, 100 V, SILICON, SIGNAL DIODE

BAV19W-G/BAV20W-G/BAV21W-G
CREAT BY ART
Taiwan Semiconductor
Small Signal Product
High Voltage Fast Switching Diode
FEATURES
- Fast switching device(t
rr
<50ns)
- Surface mount device type
- Moisture sensitivity level 1
- Low reverse leakage
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
SOD-123
MECHANICAL DATA
- Case: Bend lead SOD-123 small outline plastic package
- Terminal: Matte tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 10.5 ± 0.5 mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS
(T
A
=25℃ unless otherwise noted)
VALUE
PARAMETER
Reverse voltage
Peak reverse voltage
Power dissipation
Average rectified output current
Repetitive peak forward current
Non-repetitive peak forward surge
current
Junction and Storage temperature range
PARAMETER
BAV19W-G
Reverse voltage
BAV20W-G
BAV21W-G
BAV19W-G
Reverse leakage current
BAV20W-G
BAV21W-G
I
F
= 100 mA
I
F
= 200 mA
V
R
= 0 , f = 1.0 MHz
(Note)
VR=100V
VR=150V
VR=200V
V
F
C
j
t
rr
I
R
I
R
=100μA
V
BR
@ tp=1.0ms; TA=25℃
SYMBOL
BAV19W-G BAV20W-G BAV21W-G
V
R
V
RM
P
D
I
O
I
FM
I
FSM
R
θJA
T
J
, T
STG
SYMBOL
MIN
120
200
250
-
-
-
-
-
-
-
1.00
1.25
5.0
50
V
pF
ns
0.1
µA
100
120
150
200
500
200
400
2.5
250
-65 to +150
MAX
-
-
-
V
o
UNIT
200
250
V
V
mW
mA
mA
A
C/W
o
Thermal Resistance (Junction to Ambient)
C
UNIT
Forward voltage
Junction capacitance
Reverse Recovery Time
Note: Test condition: I
F
= I
R
= 30mA , R
L
=100Ω , I
RR
=3mA
Document Number: DS_S1404017
Version: C14

BAV19W-G Related Products

BAV19W-G BAV19W-G-N0RB BAV19W-G-N0RBG BAV19W-GRB BAV19W-GRBG BAV19W-G_14 BAV20W-G BAV21W-G
Description 0.2 A, 100 V, SILICON, SIGNAL DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE 0.2 A, 150 V, SILICON, SIGNAL DIODE 0.2 A, 200 V, SILICON, SIGNAL DIODE
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