BCX5616Q
80V NPN MEDIUM POWER TRANSISTORS IN SOT89
Description
This Bipolar Junction Transistor (BJT) is designed to meet the
stringent requirements of Automotive Applications.
Mechanical Data
Case: SOT89
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Leads,
Solderable per MIL-STD-202 Method 208
Weight: 0.055 grams (Approximate)
Features
BV
CEO
> 80V
I
c
= 1A High Continuous Collector Current
I
CM
= 2.0A Peak Pulse Current
Low Saturation Voltage V
CE(sat)
< 500mV @ 0.5A
Epitaxial Planar Die Construction
Complementary PNP types: BCX5316Q
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Applications
Automotive
Medium Power Switching or Amplification Applications
AF Driver and Output Stages
SOT89
C
E
B
C
C
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Notes 4 & 5)
Product
BCX5616QTA
BCX5616QTC
Notes:
Compliance
Automotive
Automotive
Marking
BL
BL
Reel size (inches)
7
13
Tape width (mm)
12
12
Quantity per reel
1,000
4,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
BL
BL = Product Type Marking Code
BCX5616Q
Datasheet Number: DS37024 Rev. 2 – 2
1 of 7
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May 2015
© Diodes Incorporated
BCX5616Q
Absolute Maximum Ratings
(@ T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Continuous Base Current
Peak Pulse Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
Value
100
80
6
1
2.0
100
200
Unit
V
V
V
A
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
(Note 6)
(Note 7)
(Note 8)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
Symbol
P
D
Value
1
1.5
2.0
125
83
60
13
-65 to +150
Unit
W
Thermal Resistance, Junction to Ambient Air
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
R
θJA
R
θJL
T
J,
T
STG
°C/W
°C/W
°C
ESD Ratings
(Note 10)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
6. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
7. Same as note (6), except the device is mounted on 25mm x 25mm 1oz copper.
8. Same as note (6), except the device is mounted on 50mm x 50mm 1oz copper.
9. Thermal resistance from junction to solder-point (on the exposed collector pad).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
BCX5616Q
Datasheet Number: DS37024 Rev. 2 – 2
2 of 7
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May 2015
© Diodes Incorporated
BCX5616Q
Thermal Characteristics and Derating Information
Thermal Resistance (°C/W)
Max Power Dissipation (W)
120
100
80
25mm x 25mm 1oz Cu
T
amb
=
25°C
100
25mm x 25mm 1oz Cu
T
amb
=
25°C
Single pulse
D=0.5
60
40
20
0
100µ
1m
10m 100m
1
D=0.2
Single Pulse
D=0.05
D=0.1
10
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Max Power Dissipation (W)
1.0
0.8
0.6
0.4
0.2
0.0
25mm x 25mm 1oz Cu
Pulse Power Dissipation
0
20
40
60
80
100 120 140 160
Temperature (°C)
Derating Curve
Thermal Resistance (°C/W)
140.0
3
Maximum Power (W)
T
amb
=25°C
120.0
100.0
80.0
1oz copper
2oz copper
2
1oz copper
1
60.0
40.0
2oz copper
0
500
1000
1500
2000
2500
0
T
amb
=25°C
0
500
1000
1500
2000
2500
Copper Area (sqmm)
Copper Area (sqmm)
BCX5616Q
Datasheet Number: DS37024 Rev. 2 – 2
3 of 7
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May 2015
© Diodes Incorporated
BCX5616Q
Electrical Characteristics
(@ T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 11)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Static Forward Current Transfer Ratio (Note 11)
Collector-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-On Voltage (Note 11)
Transition Frequency
Output Capacitance
Note:
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(on)
f
T
C
obo
Min
100
80
6
—
—
—
25
100
25
—
—
150
—
Typ
—
—
—
—
—
Max
—
—
—
0.1
20
20
-
250
-
0.5
1.0
-
25
Unit
V
V
V
µ
A
Test Condition
I
C
= 100µA
I
C
= 10mA
I
E
= 100µA
V
CB
= 30V
V
CB
= 30V, T
A
= +150°C
V
EB
= 5V
I
C
= 5mA, V
CE
= 2V
I
C
= 150mA, V
CE
= 2V
I
C
= 500mA, V
CE
= 2V
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, V
CE
= 2V
I
C
= 50mA, V
CE
= 10V
f = 100MHz
V
CB
= 10V, f = 1MHz
—
—
—
—
nA
—
V
V
MHz
pF
—
—
—
—
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
0.8
250
I
C
, COLLECTOR CURRENT (A)
200
h
FE
, DC CURRENT GAIN
0.6
150
0.4
100
0.2
50
0
0
1
2
3
4
5
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 1 Typical Collector Current
vs. Collector-Emitter Voltage
0
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 2 Typical DC Current Gain vs. Collector Current
V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.2
0.4
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
1.0
0.3
0.8
0.6
0.2
0.4
0.1
0.2
0
0.0001
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 3 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0
0.0001
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
BCX5616Q
Datasheet Number: DS37024 Rev. 2 – 2
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May 2015
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BCX5616Q
V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
1.2
140
1.0
120
CAPACITANCE (pF)
0.8
100
80
60
40
20
0.6
0.4
0.2
0
0.0001
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
0
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 6 Typical Capacitance Characteristics
300
f
T
, GAIN-BANDWIDTH PRODUCT (MHz)
250
200
150
100
V
CE
= 5V
f = 100MHz
50
0
0
20
40
60
80
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 7 Typical Gain-Bandwidth Product
vs. Collector Current
BCX5616Q
Datasheet Number: DS37024 Rev. 2 – 2
5 of 7
www.diodes.com
May 2015
© Diodes Incorporated
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