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1N4148_14

Description
500mW High Speed Switching Diode
File Size184KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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1N4148_14 Overview

500mW High Speed Switching Diode

1N4148/1N4448/1N914B
Taiwan Semiconductor
Small Signal Product
500mW High Speed Switching Diode
FEATURES
- Fast switching device (trr<4.0ns)
- Through-hole device type mounting
- Moisture sensitivity level 1
- Solder hot dip Tin(Sn) lead finish
- Pb free version and RoHS compliant
- All external surfaces are corrosion resistant and
leads are readily solderable
- Packing code with suffix "G" means
Halogen-free
DO-35
Hermetically Sealed Glass
MECHANICAL DATA
- Case : DO-35
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by black cathode band
- Weight : 109 ± 4 mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power Dissipation
Repetitive Peak Reverse Voltage
Peak Forward Surge Current
Pluse Width = 1μs, Square Wave
Non-Repetitive Peak Forward Current
Average Forward Current
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
PARAMETER
Reverse Breakdown Voltage
SYMBOL
P
D
V
RRM
I
FSM
I
FM
I
O
R
θJA
T
J
, T
STG
SYMBOL
V
(BR)
MIN
100
75
0.62
Forward Voltage
V
F
-
-
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time (Note 1)
Note : 1. Test Conditions : I
F
=10mA, V
R
=6V, R
L
=100Ω, I
RR
=1mA
I
R
C
J
Trr
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
VALUE
500
100
2.0
450
150
240
-65 to +150
MAX
-
-
CONDITION
I
R
=100μA
I
R
=5μA
o
UNIT
mW
V
A
mA
mA
C/W
o
C
UNIT
V
0.72 1N4448 , 1N914B I
F
=5.0mA
I
F
=10.0mA
1.0 1N4148
1.0
25
5.0
4.0
4.0
1N4448, 1N914B
V
R
=20V
V
R
=75V
V
R
=0 , f=1.0MHz
I
F
=100.0mA
V
nA
μA
pF
ns
Document Number: DS_S1410004
Version: H14
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