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BAS386_15

Description
0.2 A, 50 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size89KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

BAS386_15 Overview

0.2 A, 50 V, SILICON, SIGNAL DIODE

BAS386_15 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionHALOGEN FREE AND ROHS COMPLIANT, 玻璃, MICROMELF-2
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shaperound
Package SizeLONG FORM
surface mountYes
Terminal formWRAP AROUND
terminal coatingtin silver
Terminal locationEND
Packaging MaterialsGlass
CraftsmanshipSCHOTTKY
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typeSignal diode
Maximum repetitive peak reverse voltage50 V
Maximum average forward current0.2000 A
BAS386
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diode
FEATURES
• Integrated
discharge
protection
ring
against
static
• Very low forward voltage
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS
click logo to get started
Models
Available
APPLICATIONS
• Applications where a very low forward voltage is required
MECHANICAL DATA
Case:
MicroMELF
Weight:
approx. 12 mg
Cathode band color:
black
Packaging codes/options:
TR3/10K per 13" reel (8 mm tape), 10K/box
TR/2.5K per 7" reel (8 mm tape), 12.5K/box
PARTS TABLE
PART
BAS386
TYPE DIFFERENTIATION
V
R
= 50 V
ORDERING CODE
BAS386-TR3 or BAS386-TR
CIRCUIT CONFIGURATION
Single
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward continuous current
Average forward current
t
p
= 10 ms
t
p
1 s
TEST CONDITION
SYMBOL
V
R
I
FSM
I
FRM
I
F
I
FAV
VALUE
50
5
500
200
200
UNIT
V
A
mA
mA
mA
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
On PC board
50 mm x 50 mm x 1.6 mm
SYMBOL
R
thJA
T
j
T
stg
VALUE
320
125
-65 to +150
UNIT
K/W
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
I
F
= 0.1mA
I
F
= 1 mA
Forward voltage
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
Reserve current
Diode capacitance
V
R
= 40 V
V
R
= 1 V, f = 1 MHz
SYMBOL
V
F
V
F
V
F
V
F
V
F
I
R
C
D
MIN.
TYP.
MAX.
300
380
450
600
900
5
8
UNIT
mV
mV
mV
mV
mV
μA
pF
Rev. 2.1, 02-Jun-17
Document Number: 85505
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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