EGP30AH THRU EGP30MH
SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 3.0 Amperes
NTED
TE
NTED
PA
TE
PA
DO-201AD
FEATURES
*½Halogen-free type
1.0(25.4)
MIN.
*
Compliance
to RoHS
product
*½GPRC (Glass Passivated Rectifier Chip) inside
*½Glass passivated cavity-free junction
*½Superfast recovery time for high efficiency
*½Low forward voltage, high current capability
*½High surge current capability
*½High temperature soldering guaranteed: 260 C/10 seconds,
½ 0.375" (9.5mm) lead length, 5lbs. (2.3 kg) tension
o
0.220(5.3)
0.190(4.8)
DIA.
0.375(9.5)
0.285(7.2)
1.0(25.4)
MIN.
*½Plastic package has Underwriters Laboratory Flammability
½ Classification 94V-0
0.052(1.3)
0.048(1.2)
DIA.
MECHANICAL DATA
Case :
JEDEC DO-201AD molded plastic over glass body
Terminals :
Tin Plated, solderable per MIL-STD-750,
*Dimensions in inches and (millimeters)
TM
½ ½
Method 2026
Polarity :
Color band denotes cathode end
Weight :
0.04 ounes , 1.12 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature
SYMBOLS
unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
I
(AV)
0.375" (9.5mm) lead length (SEE FIG.1)
Peak forward surge current 8.3ms single half sine-wave
I
FSM
superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0 A
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
T
A
=25 C
o
T
A
=125 C
o
T
A
=150 C
o
o
EGP30
AH
50
35
50
BH
100
70
100
DH
200
140
200
GH
400
280
400
JH
600
420
600
KH
800
560
800
MH
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
V
RRM
V
RMS
V
DC
3.0
125
1.0
5
50
120
50
75
20
8
-65 to +175
1.25
115
1.7
5
120
-
75
Amps
Volts
V
F
I
R
uA
trr
C
J
R
R
JA
JL
nS
pF
o
C/W
o
T
J
,T
STG
C
NOTES :½ Reverse recovery test condition : IF 0.5A, IR=1.0A, Irr=0.25A
(1)½
½
(2)½
Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
½
(3)½
Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead lengths, P.C.B. mounted.
REV. 0
Zowie Technology Corporation
RATINGS AND CHARACTERISTIC CURVES EGP30AH THRU EGP30MH
FIG.1 - FORWARD CURRENT DERATING CURVE
3.0
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
RESISTIVE OR
INDUCTIVE LOAD
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
175
150
125
100
75
EGP30JH~EGP30MH
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
2.5
2.0
1.5
EGP30AH~EGP30GH
1.0
0.5
0.375" (9.5mm) LEAD LENGTH
50
25
0
0
0
25
50
75
100
125
o
150
175
1
10
NUMBER OF CYCLES AT 60Hz
100
AMBIENT TEMPERATURE, C
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10.00
PULSE WIDTH=300uS
1% DUTY CYCLE
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
100
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
INSTANTANEOUS REVERSE LEAKAGE
CURRENT, MICROAMPERES
T
J
= 150 C
o
1.00
10
T
J
= 75 C
o
0.10
1
EGP30JH~EGP30MH
EGP30GH
EGP30AH~EGP30DH
T
J
= 25 C
o
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2 1.4 1.6
1.8
2.0
0.1
0
20
40
60
80
100
110
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
T
J
= 25 C
o
FIG.6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
TRANSIENT THERMAL IMPEDANCE( C/W)
100
1000
JUNCTION CAPACITANCE, pF
o
10
100
1
10
.1
.2
.4
1.0
2
4
10
20
40
100
REVERSE VOLTAGE, VOLTS
0.1
0.01
0.10
1.0
t , PULSE DURATION, sec
10
100
REV. 0
Zowie Technology Corporation
Embedded System
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