LED DOT MATRIX
BL-ML23X882UED
Features:
60.96mm (2.3”) LED dot matrix display.5mm Oval Type LED Lamps in dot matrix.
Low current operation.
Excellent character appearance.
Easy mounting on P.C. Boards or sockets.
I.C. Compatible.
ROHS Compliance.
Electrical-optical characteristics: (Ta=25°C)
Chip
Part No
Row Cathode
Column Anode
BL-ML23A882URC
BL-ML23A882UEC
BL-ML23A882UYC
BL-ML23A882UGC
BL-ML23A882PGC
(Test Condition: IF=20mA)
λ
P
(n
m)
660
630
590
574
525
470
/
Row Anode
Column Cathode
BL-ML23B882URC
BL-ML23B882UEC
BL-ML23B882UYC
BL-ML23B882UGC
BL-ML23B882PGC
Emit
color
Ultra
Red
Ultra
Red
Ultra
Yellow
Ultra
Green
Ultra
Pure
Green
Ultra
Blue
Ultra
White
Materi
al
AlGaAs,
DDH
AlGaInP
AlGaInP
AlGaInP
InGaN
InGaN
InGaN
Forward
Voltage(VF)
Unit:V
Typ
1.95
2.10
2.10
2.20
3.80
2.70
2.70
Max
2.20
2.50
2.50
2.50
4.50
4.20
4.20
Luminous
Intensity
(Iv)
Unit:mcd
Min. Typ.
500
250
250
100
600
600
1000
750
800
800
250
1800
1500
2300
BL-ML23A882UBC
BL-ML23A882UWC
BL-ML23B882UBC
BL-ML23B882UWC
Absolute maximum ratings (Ta=25°C)
Parameter
Forward Current I
F
Power Dissipation P
d
Reverse Voltage V
R
Peak Forward Current
I
PF
(Duty 1/10 @1KHZ)
Operation Temperature
T
OPR
Storage
Temperature
T
STG
Lead Soldering
Temperature
T
SOL
UR
25
60
5
150
UE
30
65
5
150
UY
30
65
5
150
UG
30
75
5
150
-40 to +80
-40 to +85
PG
30
110
5
150
UB
30
120
5
100
W
30
120
5
100
Unit
mA
mW
V
mA
°C
°C
Max.260±5°C for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
°C
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
Page 1 of 4
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LED DOT MATRIX
BL-ML23X882UED
Package configuration & Internal circuit diagram
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is ±0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
Page 2 of 4
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LED DOT MATRIX
BL-ML23X882UED
Typical electrical-optical characteristics curves:
1.0
(A)
(B)
(C)
(D)
(2)
(3)
(8)
(4)
(1) (6)
(5)
(9)
(10)
0.5
0
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
Wavelength(nm)
RELATIVE INTENSITY Vs WAVELENGTH(λ p )
(1) - GaAsP/GaAs 655nm/Red
(2) - GaP 570nm/Yellow Green
(3) - GaAsP/GaP 585nm/Yellow
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red
(5) - GaP 700nm/Bright Red
(6) - GaAlAs/GaAs 660nm/Super Red
(8) - GaAsP/GaP 610nm/Super Red
(9) - GaAlAs 880nm
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm
(A) - GaN/SiC 430nm/Blue
(B) - InGaN/SiC 470nm/Blue
(C) - InGaN/SiC 505nm/Ultra Green
(D) - InGaAl/SiC 525nm/Ultra Green
50
FORWARD CURRENT(mA)
RELATIVE LUMINOUS INTENSITY
3
2
1
0.5
0.2
0.1
-30
-20
-10
1
8
64 5
2 3
4.0
1
3.0
FORWARD CURRENT(mA)
50
40
30
20
10
0
RELATIVE LUMINOUS INTENSITY
40
30
20
10
0
1.2
1
6
2,4,8,A
3
5
2.0
5
B
1.0
0
20
40
60
80
100
1.6
2.0
2.4
2.6
3.0
20
40
60
80
100
FORWARD VOLTAGE (Vf)
FORWARD CURRENT VS.
FORWARD VOLTAGE
FORWARD CURRENT (mA)
RELATIVE LUMINOUS
INTENSITY VS. FORWARD
CURRENT
AMBIENT TEMPERATURE Ta(
℃
)
FORWARD CURRENT VS. AMBIENT
TEMPERATURE
1
5
4
2
3
10
9
8
7
6
5
4
3
2
0
10
20
30
40
50
60
70
1
AMBIENT TEMPERATURE Ta(
℃
)
1
Ipeak MAX.
IDC MAX.
300KHz
3KHz
10KHz
1KHz
100KHz F-REFRESH RATE
3KHz
300Hz
30KHz
100KHz
10KHz 1KHz
100Hz
10
9
8
7
6
5
Ipeak MAX.
IDC MAX.
4
3
2
1
1
10
100
1000
tp-PULSE DURATION uS
(5)
10
100
1000
10,000
10,000
tp-PULSE DURATION uS
(1,2,3,4,6,8,B.D.J.K)
NOTE:25
℃
free air temperature unless otherwise specified
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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