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DIM400DDM12-A000_15

Description
Dual Switch IGBT Module
File Size345KB,8 Pages
ManufacturerDynex
Websitehttp://www.dynexsemi.com/
Download Datasheet View All

DIM400DDM12-A000_15 Overview

Dual Switch IGBT Module

3
DIM400DDM12-A000
Replaces DS5532-4
11.5
±0.2
Dual Switch IGBT Module
DS5532-5 June 2014 (LN31690)
FEATURES
±0.2
6
10µs
18
±0.2
Short Circuit Withstand
High Thermal Cycling Capability
44
±0.2
Non Punch Through Silicon
57
±0.2
Isolated AlSiC Base with AlN Substrates
Lead Free Construction
6 x
O7
KEY PARAMETERS
V
CES
V
CE(sat)
* (typ)
I
C
(max)
I
C(PK)
(max)
14
±0.2
28
±0.5
1200V
2.2 V
screwing depth
400A
8
max
800A
* Measured at the power busbars, not the auxiliary terminals
55.2
± 0.3
11.85
±0.2
APPLICATIONS
1(E)
5
(E)
6
(G)
2(C)
12
(C)
11
(G)
High Reliability Inverters
Motor Controllers
Traction Drives
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM400DDM12-A000 is a dual switch 1200V, n-
channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus 10μs
short circuit withstand. This device is optimised for
traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety
.
7
(C)
3(C)
4(E)
10
(E)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM400DDM12-A000
Note: When ordering, please use the complete part
number
Outline type code: D
(See Fig. 11 for further information)
Fig. 2 Package
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
1
/
8
www.dynexsemi.com
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