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PR1003G

Description
1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size90KB,2 Pages
ManufacturerCTC [Compact Technology Corp.]
Download Datasheet Compare View All

PR1003G Overview

1 A, 200 V, SILICON, SIGNAL DIODE, DO-41

PR1001G thru PR1007G
FAST RECOVERY RECTIFIERS
GLASS PASSIVATION JUNCTION
REVERSE VOLTAGE
- 50
to
1000
Volts
FORWARD CURRENT
- 1.0
Amperes
FEATURES
Fast switching for high efficiency
Low cost
Glass passivation junction
Low reverse leakage current
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
A
DO-41
B
A
C
D
MECHANICAL DATA
Case : JEDEC DO-41 molded plastic
Polarity : Color band denotes cathode
Weight : 0.012 ounces, 0.34 grams
Mounting position : Any
DO-41
Dim.
A
B
C
Min.
25.4
4.20
0.70
Max.
-
5.20
0.90
2.00
2.70
D
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3ms single
half sine-wave superim posed on rated load
Maximum instantaneous I
F
=1A@25℃
Maximum DC Reverse Current @TA=25℃
at Rated DC Blocking Voltage @TA=100℃
Maximum Reverse Recovery Time
Typical Junction Capacitance
Operating Temperature Range
Storage Temperature Range
SYMBOL
PR
PR
PR
PR
PR
PR
PR
UNIT
1001G 1002G 1003G 1004G 1005G 1006G 1007G
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
VRRM
VRMS
VDC
I
F
I
FSM
V
F
I
R
Trr
C
J
T
J
T
STG
V
V
V
A
A
V
uA
1.0
30.0
1.30
5
100
150
15
-55 to +150
-55 to +150
250
500
nS
pF
1
of 2
PR1001G thru PR1007G

PR1003G Related Products

PR1003G PR1001G_15 PR1005G PR1006G PR1007G PR1002G
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