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US1K

Description
1 A, 800 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size64KB,2 Pages
ManufacturerCTC [Compact Technology Corp.]
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US1K Overview

1 A, 800 V, SILICON, SIGNAL DIODE

US1A thru US1M
SURFACE MOUNT
ULTRA FAST RECTIFIERS
REVERSE VOLTAGE
- 50
to
1000
Volts
FORWARD CURRENT
- 1.0
Ampere
SMAE
FEATURES
Plastic passivated Junction
Ultra fast switching for high efficiency
For surface mounted applications
Low forward voltage drop and high current capability
Low reverse leakage current
Plastic material has UL flammability classification 94V-0
H
Cathode Band
J
A
C
E
D
B
MECHANICAL DATA
Case : Molded plastic
Polarity : Indicated by cathode band
Weight : 0.002 ounces, 0.064 grams
G
DIMENSIONS
INCHES
MIN
.081
.059
.002
--
.030
.189
.159
.094
MM
MIN
2.05
1.50
0.05
---
0.76
4.80
4.05
2.40
DIM
A
B
C
D
E
G
H
J
MAX
.089
.075
.010
.008
.052
.209
.167
.102
MAX
2.25
1.90
0.25
.20
1.32
5.30
4.25
2.60
NOTE
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
SYMBOL
US1A
50
35
50
US1B
100
70
100
US1D
200
140
200
US1G
400
280
400
1.0
30
US1J
600
420
600
US1K
800
560
800
US1M
1000
700
1000
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
T
RR
C
J
R
0JL
@T
L
=75 C
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)
Maximum forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
A
1.0
1.3
5.0
100
50
20
30
-55 to +150
-55 to +150
1.7
V
uA
@T
J
=25 C
@T
J
=100 C
Maximum Reverse Recovery Time (Note 1)
Typical Junction
Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
75
17
ns
pF
C/W
T
J
T
STG
C
C
NOTES : 1.Reverse Recovery Test Conditions :I
F
=0.5A,I
R
=1.0A,I
RR
=0.25A.
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal Resistance junction to Lead.
CTC0171
Ver.
1.0
1
of 2
US1A thru US1M

US1K Related Products

US1K US1B US1D US1G US1M US1A US1J
Description 1 A, 800 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 1000 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC SIGNAL DIODE

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