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To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
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Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR16CM
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR16CM
OUTLINE DRAWING
10.5 MAX
3.2±0.2
Dimensions
in mm
4.5
4
1.3
16 MAX
∗
12.5 MIN
3.8 MAX
TYPE
NAME
VOLTAGE
CLASS
1.0
0.8
2.5
2.5
4.5
7.0
φ3.6±0.2
0.5
2.6
123
24
1
2
33
4
∗
Measurement point of
case temperature
• I
T (RMS)
...................................................................... 16A
• V
DRM
....................................................................... 600V
• I
FGT
!
, I
RGT
!
, I
RGT
#
............................................ 20mA
1
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
T
2
TERMINAL
TO-220
APPLICATION
Contactless AC switches , light dimmer, electric flasher unit, hair drier,
control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared
kotatsu · carpet · electric fan, solenoid drivers,
small motor control, copying machine, electric tool,
other general purpose control applications
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
½1
Non-repetitive peak off-state
voltage
½1
Voltage class
12
600
720
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
—
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Typical value
Conditions
Commercial frequency, sine full wave 360° conduction,
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
T
c
=100°C
½3
Ratings
16
170
121
5.0
0.5
10
2
–40 ~ +125
–40 ~ +125
2.0
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
½1.
Gate open.
Mar. 2002
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR16CM
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
(dv/dt)
c
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
½5
Parameter
Repetitive peak off-state current
On-state voltage
!
Gate trigger voltage
½2
@
#
!
Gate trigger
current
½2
@
#
T
j
=125°C, V
D
=1/2V
DRM
Junction to
T
j
=125°C
case
½3 ½4
Test conditions
T
j
=125°C, V
DRM
applied
T
c
=25°C, I
TM
=25A, Instantaneous measurement
Min.
—
—
—
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
20
20
20
—
1.4
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/
W
V/µs
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
—
—
—
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
—
—
0.2
—
10
½2.
Measurement using the gate trigger characteristics measurement circuit.
½3.
Case temperature is measured at the T2 terminal 1.5mm away from the molded case.
½4.
The contact thermal resistance R
th (c-f)
in case of greasing is 1.0°C/W.
½5.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
T
j
=125°C
2. Rate of decay of on-state commutating current
(di/dt)
c
=–8.0A/ms
3. Peak off-state voltage
V
D
=400V
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
(di/dt)c
TIME
TIME
TIME
V
D
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
SURGE ON-STATE CURRENT (A)
RATED SURGE ON-STATE CURRENT
200
180
160
140
120
100
80
60
40
20
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
ON-STATE CURRENT (A)
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
ON-STATE VOLTAGE (V)
T
j
= 125°C
T
j
= 25°C
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002
Analogue and Mixed Signal
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